Control of crystallization of solid He by acoustic radiation pressure and novel dynamics of quantum interface

声辐射压控制固体氦结晶和量子界面的新颖动力学

• 批准号: 15340114
• 负责人: NOMURA Ryuji
• 金额: $ 10.5万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15340114/
• 关键词: Solid 4He; Ultrasound; SUperfluid; Crystal growth; Facet; Step; Acoustic radiation pressure; Quantum solids; 量子液体; 異方的界面; 非線形音響効果; 高速界面運動

We observed the very fast growth of the c-facet of a S^4$He crystal induced by acoustic waves. The growth velocity cannot be explained by the spiral growth model for the known values of the step mobility. We developed a new crystal growth mechanism of the facet by high power acoustic waves. Considering the first order effect of the oscillating pressure of the acoustic wave, steps are accelerated to the order of the sound velocity. Collisions of such high speed steps can induce the multiplication of steps as Parshin and Tsymbalenko suggested and lead to the larger step density than that of the spiral growth. This model reproduces the observed power and temperature dependence well and also has a quantitative agreement with the experiment.

我们观察到在声波诱导下S^4$He晶体的c面生长非常快。在阶跃迁移率已知的情况下，生长速度不能用螺旋增长模型来解释。我们开发了一种利用高功率声波在表面生长晶体的新机制。考虑到声波振荡压力的一阶效应，步骤被加速到声速的阶数。正如Parshin和Tsymbalenko所建议的那样，这种高速步长碰撞会导致步长倍增，并导致比螺旋增长更大的步长密度。该模型较好地再现了观测到的功率和温度的依赖关系，并与实验结果有定量的一致性。

项目成果

Facet Growth of 4He Crystal Induced by Acoustic Wave

声波诱导 4He 晶体的刻面生长

• 发表时间: 2006
• 期刊: J. Phys. Soc. Jpn. (Letter) 75・2
• 作者: H.Abe;Y.Saitoh;T.Ueda;F.Ogasawara;R.Nomura;Y.Okuda;A.Ya.Parshin
• 通讯作者: A.Ya.Parshin

S.Kimura, F.Ogawara, Y.Suzuki, R.Nomura^*, Y.Okuda: "Solid-liquid Interface Motion of ^4He in an Acoustic Field"J.Low Temp.Phys.. 134. 157-162 (2004)

S.Kimura、F.Okawara、Y.Suzuki、R.Nomura^*、Y.Okuda：“声场中 ^4He 的固液界面运动”J.Low Temp.Phys.. 134. 157-162 (

Solid-Liquid Interface Motion of 4He Induced by Heat Pulse

热脉冲引起的 4He 固液界面运动

• 发表时间: 2006
• 期刊: AIP Proceedings (To be published)
• 作者: Y.Saitoh;T.Ueda;F.Ogasawara;H.Abe^*;R.Nomura;Y.Okuda
• 通讯作者: Y.Okuda

Orientation Dependence of Interface Motion in ^4He Crystals Induced by Acoustic Waves

声波引起的 ^4He 晶体中界面运动的方向依赖性

• 发表时间: 2004
• 期刊: Phys.Rev.B 70
• 作者: R.Nomura;S.Kimura;F.Ogasawara;H.Abe;Y.Okuda
• 通讯作者: Y.Okuda

Facet Growth of 4He Crystal Induceed by Acoustic Waves

声波诱导 4He 晶体的刻面生长

• 发表时间: 2006
• 期刊: J.Phys.Soc.Jpn. (Letter) 75
• 作者: H.Abe;Y.Saitoh;T.Ueda;F.Ogasawara;R.Nomura;Y.Okuda;A.Ya.Parshin
• 通讯作者: A.Ya.Parshin