Control of crystallization of solid He by acoustic radiation pressure and novel dynamics of quantum interface

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We observed the very fast growth of the c-facet of a S^4$He crystal induced by acoustic waves. The growth velocity cannot be explained by the spiral growth model for the known values of the step mobility. We developed a new crystal growth mechanism of the facet by high power acoustic waves. Considering the first order effect of the oscillating pressure of the acoustic wave, steps are accelerated to the order of the sound velocity. Collisions of such high speed steps can induce the multiplication of steps as Parshin and Tsymbalenko suggested and lead to the larger step density than that of the spiral growth. This model reproduces the observed power and temperature dependence well and also has a quantitative agreement with the experiment.