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The development of the element process technology for the new type LSI of the product layer by VUV-CVD

VUV-CVD产品层新型LSI元件工艺技术的开发

基本信息

批准号：
15360194
负责人：
KAMEYAMA Akihiro
金额：
$ 9.22万
依托单位：
University of Miyazaki
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360194/
关键词：
VUV-CVD System LSI femto-second laser 真空紫外光エキシマランプ光CVD 半導体絶縁膜 System in Package 真空紫外 Sip システムLSI

项目摘要

High-performance of the system LSI is being looked for in the information-technology society. The high density of the LSI, the technology research and development of the miniaturization have been advanced since before. It is not a two-dimensional integrated circuit, but you must make the three-dimensional integrated circuit, that is, the product layer type for more high density. It is very important to establish the preparation technology of the product layer pattern system LSI which put more than one function specially and together in one chip. The depth of the via hole of the system LSI was about several 100μm, and the depth of the via hole of the system LSI was uniform and difficult to make an excellent insulation film in the insulation character so far with the technology. We developed the new technology (VUV-CVD method) that a silicone pale film which oxidized by the photo-chemical reaction of an organic silicone compound by the vacuum purple outside light was made. It is possible in this method that an insulation film is made to accumulate in the via hole of the system LSI that it is deep because a pale film can be made if it is the place where light appears. So, the development of the process technology for the next generation product layer pattern system LSI was done by using VUV-CVD method in this research.A plasma-etching device was made in 2003. A pale film insulated by the vacuum purple outside light CVD on the side of the via hole of the depth 5-50μm made in the Si circuit board or the quartz glass circuit board by the plasma etching law, a diameter 5-50mm was made to accumulate in a 2004〜2005.

信息技术社会正在寻求系统LSI的高性能。 LSI的高密度化、小型化的技术研发一直在进步。它不是二维集成电路，但必须制作三维集成电路，即更高密度的产品层型。建立将多种功能专门集成在一块芯片上的产品层模式系统LSI的制备技术非常重要。系统LSI的过孔深度约为数百μm，且系统LSI的过孔深度均匀，以现有技术难以制作出绝缘特性优异的绝缘膜。我们开发了新技术（VUV-CVD法），通过真空紫色外部光的作用，有机硅化合物发生光化学反应，形成硅酮浅色薄膜。在该方法中，由于如果是光出现的地方，则可以制作浅色的膜，所以可以在系统LSI的通孔内堆积较深的绝缘膜。因此，本研究采用VUV-CVD法进行下一代产品层图形系统LSI的工艺技术开发。2003年制作了等离子蚀刻装置。利用等离子蚀刻法在Si电路板或石英玻璃电路板上制作的深度5-50μm的通孔侧面，通过真空紫色外光CVD绝缘了一层浅色薄膜，形成直径5-50mm的积层。在2004〜2005年。

项目成果

期刊论文数量（57）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Applications of OLEDs that use VUV-CVD films

使用VUV-CVD薄膜的OLED的应用

DOI：
发表时间：
2005
期刊：
Journal of the Society for Information Display 13・5
影响因子：
0
作者：
Kyoichi Oshida;Tatsuo Nakazawa;Sylvie Bonnamy;Takaomi Suzuki;Kozo Osawa;Morinobu Endo;K.Toshikawa
通讯作者：
K.Toshikawa

プラスチックの表面の改質方法、プラスチック表面のメッキ方法、プラスチック・プラスチック表面改質装置

塑料表面改性方法、塑料表面电镀方法、塑料/塑料表面改性设备