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Phase transition of high-dielectric insulating films studied by extremely asymmetric X-ray diffraction and X-ray photoelectron spectroscopy

利用极不对称X射线衍射和X射线光电子能谱研究高介电绝缘薄膜的相变

基本信息

批准号：
16340088
负责人：
AKIMOTO Koichi
金额：
$ 10.3万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2006
项目状态：
已结题

项目摘要

We have studied the crystallization process of HfO_2 and HfAlOx films using grazing incidence X-ray diffraction (GIXRD) with synchrotron radiation. The HfO_2 and HfA1Ox films were grown by atomic layer deposition (ALD) on a chemical Si02 interfacial layer. X-ray diffraction (XRD) patterns of the HfO_2 film as-deposited contain not only the monoclinic phase but also the orthorhombic or tetragonal phase. With increasing annealing temperature, the orthorhombic or tetragonal phase decreases and disappears. The HfAlOx film crystallized after annealing at 900 ℃. The crystallographic phase was the cubic phase of CaF_2 type.We studied the effect of post-deposition annealing on a HfO_2/Si interface of by extremely asymmetric X-ray diffraction. Comparing the rocking curves before annealing the sample with those of the annealed sample, it is found that an interfacial layer with a density of 3 g/cm^3 grows at the interface between the HfO_2 layer and the substrate during post-deposition annealing. … More The wavelength dependency of the integrated intensities of the rocking curve for the as-deposited sample fluctuated with the observation position. This fluctuation was suppressed by annealing. From these results we concluded that the strain introduced into the substrate becomes homogeneous by annealing. Moreover, a quantitative estimation of the strain by curve fitting reveals the existence of compressive strain under the HfO_2 layer.We studied HfA10x(N)/SiO_2/Si films which were fabricated by the layer-by-layer deposition and annealing (LL-D＆A) method with different annealing conditions. In this time, in-situ annealing was performed at various temperatures in a NH_3 ambient. In addition, post-deposition annealing (PDA) was performed for some samples. For each sample, the interfacial lattice strain was evaluated using strain-sensitive X-ray diffraction and the local dielectric constant near the Al atoms was measured by X-ray photoelectron spectroscopy (XPS). Observation of the strain field was done by measuring the X-ray rocking curve of the Si 113 reflection of the Si (001) substrate under grazing incidence conditions. It was found that in the case of the samples without PDA, for higher in-situ annealing temperatures compressive strain is introduced and the local dielectric constant becomes lower. For the samples with PDA, the differences of the lattice strain and the local dielectric constant are small for different in-situ annealing temperatures. Less

利用同步辐射掠入射X射线衍射（GIXRD）技术研究了HfO_2和HfAlOx薄膜的晶化过程。HfO_2和HfAlOx薄膜通过原子层沉积（ALD）在化学SiO_2界面层上生长。X射线衍射（XRD）结果表明，HfO_2薄膜不仅含有单斜晶相，而且含有正交晶相或四方晶相。随着退火温度的升高，正交相或四方相减少甚至消失。HfAlOx薄膜在900 ℃退火后晶化。晶体相为CaF_2型立方相，用极不对称X射线衍射研究了沉积后退火对HfO_2/Si界面的影响。比较退火前和退火后样品的摇摆曲线，发现沉积后退火过程中，在HfO_2层与衬底的界面处生长了密度为3 g/cm^3的界面层。 ...更多信息沉积态样品的摇摆曲线的积分强度随波长的变化随观察位置的变化而波动。这种波动被退火抑制。从这些结果中我们得出结论，引入衬底的应变通过退火变得均匀。通过曲线拟合定量估算了HfO_2层下的应变，揭示了HfO_2层下存在压应变。我们研究了采用层层沉积退火（LL-D&A）方法制备的HfA_（10 x）（N）/SiO_2/Si薄膜在不同退火条件下的应变。在此期间，在NH_3气氛中在不同温度下进行原位退火。此外，对一些样品进行沉积后退火（PDA）。对于每个样品，界面晶格应变进行了评估，使用应变敏感的X射线衍射和附近的Al原子的局部介电常数进行了测量，通过X射线光电子能谱（XPS）。应变场的观察是通过测量在掠入射条件下Si（001）衬底的Si 113反射的X射线摇摆曲线来完成的。结果发现，在没有PDA的样品的情况下，对于较高的原位退火温度的压缩应变被引入和局部介电常数变得较低。对于PDA的样品，不同的原位退火温度下的晶格应变和局域介电常数的差异很小。少

项目成果

期刊论文数量（19）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

X-ray photoelectron spectroscopy study of dielectric constant for Si compounds

DOI：
10.1063/1.2361177
发表时间：
2006-10-09
期刊：
APPLIED PHYSICS LETTERS
影响因子：
4
作者：
Hirose, K.;Kihara, M.;Hattori, T.
通讯作者：
Hattori, T.

Neutron-induced Single Event Upsets in advanced commercial Fully Depleted SOI SRAMs

先进商用全耗尽 SOI SRAM 中中子引起的单粒子扰乱

DOI：
发表时间：
2005
期刊：
IEEE Transactions on Nuclear Science 52(6)
影响因子：
0
作者：
K.Hirose et al.;Motoi Endo;K.Hirose 他;K.Akimoto 他;Ryo Takahashi;W.Voegeli 他;Mizue Honda;N.Terasawa 他;Kang-Sin Choi;T.Emoto 他;Hiroyuki Abe;N.Terasawa et al.;T.Emoto et al.;T. Higashi;V.Ferlet-Cavrois 他;J.Baggio 他
通讯作者：
J.Baggio 他

Crystal orientation changes of Ag thin films on the Si(111) substrate due to tribo-assisted recrystallization

Si(111) 衬底上 Ag 薄膜因摩擦辅助再结晶而发生晶体取向变化

DOI：
发表时间：
2006
期刊：
Thin Solid Films 515
影响因子：
0
作者：
S.Kashiwagi;R.Kuroda;Y.Hama;M.Washio et al.;K.Hirose 他;K.Akimoto 他
通讯作者：
K.Akimoto 他

Strain distribution due to ion implantation revealed by extremely asymmetric x-ray diffraction

极其不对称的 X 射线衍射揭示了离子注入引起的应变分布

DOI：
发表时间：
2006
期刊：
e-J. Surface Science and Nanotechnology 4
影响因子：
0
作者：
S.Kashiwagi;R.Kuroda;Y.Hama;M.Washio et al.;K.Hirose 他;K.Akimoto 他;T.Emoto 他
通讯作者：
T.Emoto 他

Valence Charges for ultrathin Si0_2 films formed on Si (100), Valence Charges for ultrathin Si0_2 films formed on Si (100)

Si (100) 上形成的超薄 SiO_2 薄膜的价电荷, Si (100) 上形成的超薄 SiO_2 薄膜的价电荷