Study on crystal grains of GaN which has microstructures in mesoscopic scale.
Study on crystal grains of GaN which has microstructures in mesoscopic scale.
批准号:
21560013
负责人:
AKIMOTO Koichi
金额:
$2.83万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011
中文摘要
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英文摘要
By X-ray topography using CCD camera,ΔθandΔd successfully measured separately inμm order GaN which has microstructures in mesoscopic scale. By employing Darwin's dynamical X-ray diffraction theory, quantitative evaluation of strain at surfaces and interfaces becomes possible. Method of quantitative strain analysis on the GaN surface was established.
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Novel Film Growth Mechanism using Tribo-Assisted Phenomenon
利用摩擦辅助现象的新型薄膜生长机制
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[渡辺剛, 細貝拓也, 小金澤智之, 田村浩平, 齋藤正基, 神谷亮輔, 菊池護, 吉本則之, K.Akimoto]
通讯作者:
K.Akimoto
Structure of the quasi-one-dimensional Si(553)-Au surface
准一维Si(553)-Au表面结构
DOI:
10.1103/physrevb.82.075426
发表时间:
2010
期刊:
Gold dimer row and silicon honeycomb chain, Phys. Rev
影响因子:
--
作者:
[W. Voegeli, T. Takayama, T. Shirasawa, M. Abe, K. Kubo, T. Takahashi, K. Akimoto, and H. Sugiyama]
通讯作者:
and H. Sugiyama
Strain analysis of SiC and GaN surface regions using extremely asymmetric X-ray diffraction, 11th International Conference on Atomically Controlled Surfaces
使用极不对称 X 射线衍射对 SiC 和 GaN 表面区域进行应变分析,第 11 届国际原子控制表面会议
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[野地尚, 今泉真人, 足立匡, 小池洋二, K. Akimoto]
通讯作者:
K. Akimoto
Strain analysis of SiC and GaN surface regions using extremely asymmetric X-ray diffraction
使用极不对称 X 射线衍射对 SiC 和 GaN 表面区域进行应变分析
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[小野久美子・徳山尊大, 金岡鐘局・青島貞人, K.Akimoto]
通讯作者:
K.Akimoto
X線回折法によるGaN表面近傍のひずみ評価
使用 X 射线衍射法评估 GaN 表面附近的应变
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[H.Yamada-Kaneta, H.Watanabe, Y.Nagai, S.Baba, M.Akatsu, Y.Nemoto, T.Goto, 鈴木良和,持木健吾,秋本晃一,浪田秀郎,長尾哲]
通讯作者:
鈴木良和,持木健吾,秋本晃一,浪田秀郎,長尾哲
共 14 条
Study on strain fields of GaN crystals which have microstructures in mesoscopic scale.
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批准号:24560009
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项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$3.49万
-
财政年份:2012
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负责人:AKIMOTO Koichi
-
依托单位:
Phase transition of high-dielectric insulating films studied by extremely asymmetric X-ray diffraction and X-ray photoelectron spectroscopy
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批准号:16340088
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.3万
-
财政年份:2004
-
负责人:AKIMOTO Koichi
-
依托单位:
Strain Relaxation at Semiconductor Surface Revealed by X-Ray Diffraction
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批准号:12440086
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.78万
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财政年份:2000
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负责人:AKIMOTO Koichi
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依托单位:
海外基金