Mechanism and conditions on the atomic-interchange lateral manipulation

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We clarified that the atom-interchange lateral manipulation is possible for various intermixed semiconductor surfaces. Besides, we both experimentally and theoretically disclosed that the lateral atom manipulation at room temperature is stochastically induced by the directional thermal diffusion through the diffusion barrier decreased by the tip-sample interaction. We also found the novel phenomenon of the atom-interchange vertical manipulation interchanged by the single-atom pen of the AFM, and then fabricated the embedded atom letter in a short time. Further, we declared that the mechanical chemical-identification by AFM can be feasible by comparing the magnitude of the covalent bonding force of single atoms.