High Frequency Oscillation due to Tunneling of Charged Particles

带电粒子隧道引起的高频振荡

• 批准号: 61460059
• 负责人: MORITA Seizo
• 金额: $ 3.78万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1986
• 资助国家: 日本
• 起止时间: 1986 至 1987
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-61460059/
• 关键词: Charged Particle; Tunnel; High Frequency Oscillation; Contactless Tunnel Junction; Scanning Tunneling Microscope (STM); Metal Whisker; 針状結晶; 簡易型走査トンネル顕微鏡(STM)

In the present research, we constructed the following apparatuses:1. An apparatus for the construction of contactless tunnel junction with a very small junction area and a small junction capacitance. This apparatus is similar to a scanning tunneling microscope (STM).2. A vacuum system with a facility to make surfaces of junction electrodes clean.3. A low-temperature apparatus of contactless tunnel junction.Using contactless tunnel junction in air, we obtained the following results:1. Tunneling current between thin metal film and scanning tip becomes unstable because electric charge accumulates at grains of thin metal film.2. We measured STM images of fine noble metal particles supported on the oxidized titanium plate. We found that fine metal particles gather together and move to the direction perpendicular to the scanning direction of tip because of electrostatic force induced by electric charge accumulated on fine metal particles.3. Tunnel junction between a metal whisker and a scanning tip has a very small capacitance. Top of a metal whisker is sharper than that of the scanning tip.

在本研究中，我们构建了以下装置：1。一种用于构造具有非常小的结面积和小的结电容的无接触隧道结的装置。该装置类似于扫描隧道显微镜（STM）。2.一种真空系统，具有使结电极表面清洁的设施。一种低温非接触隧道结装置，利用空气中的非接触隧道结，得到了以下结果：1。由于电荷在金属薄膜的晶粒处积累，金属薄膜与扫描针尖之间的隧穿电流变得不稳定.我们测量了负载在氧化钛板上的精细贵金属颗粒的STM图像。研究发现，由于金属微粒上积累的电荷所产生的静电力，使金属微粒聚集在一起，并向垂直于针尖扫描方向的方向移动.金属晶须和扫描针尖之间的隧道结具有非常小的电容。金属须的顶部比扫描针尖的顶部更尖锐。

项目成果

森田清三: Japanese Journal of Applied Physics. 25. L743-L745 (1986)

Seizo Morita：日本应用物理学杂志。25.L743-L745（1986）

御子柴宣夫: Japanese Journal of Applied Physics. 26. 200-202(26-1) (1987)

Nobuo Mikoshiba：日本应用物理学杂志。26. 200-202(26-1) (1987)

森田清三: 電子材料. 12月号. 115-120 (1986)

Seizo Morita：电子材料115-120（1986）。

御子柴宣夫: Proc.of 7th Ultrasonic Electronics,Kyoto,1986〔a special issue of Jpn.J.Appl.Phys.(1987)〕. 26. (1987)

Nobuo Mikoshiba：Proc. of 7th Ultrasonic Electronics，京都，1986〔Jpn.J.Appl.Phys.(1987) 特刊〕26。（1987）

森田清三: Japanese Journal of Applied Physics. 26. L306-L308 (1987)

Seizo Morita：日本应用物理学杂志。26.L306-L308（1987）