ZnO-based semiconductor nanostructures for optical quantum devices

ZnO具有3.28 eV的带隙能和60 meV的激子结合能等特性，是光学器件应用的重要标准。zno基材料体系有望成为下一代光学半导体材料。但在外延膜质量、带隙工程和p型掺杂等方面存在一些问题。为了克服这些问题，我们开发了用于ZnO基体系的远程等离子体增强金属有机化学沉积系统（RPE-MOCVD），并成功地生长出了带隙从3.7 ev到1.9 ev的ZnO(Mg, Cd) O合金体系。我们在p-4H-SiC基底上生长了ZnO基双异质结，并通过电流注入实现了RGB电致发光。由于量子力学效应，ZnO纳米点在Si基态上表现出蓝移现象。开辟了氧化物半导体纳米光子学的研究领域。基于zno基材料体系。

ZnO has some features such as a bandgap energy of 3.28 eV and an exciton binding energy of 60 meV as an important criterion for optical device applications. ZnO-based material system is expected for nexrgeneration optical semiconductor materials. However, we had some problems on epitaxial films quality, difficulties of bandgap engineering and p-type doping. In order to overcome these problems, we have deveopled remote-plasma-enhanced metalorganic chemical deposition system (RPE-MOCVD) for ZnO-based systems and succeeded in growth of ZnO(Mg, Cd) O alloy systems having bandgaps fron 3.7 ev down to 1.9 eV. We have done ZnO based double heterojunctions growth on p-4H-SiC substates and achieved RGB electroluminescence emissions via current injection. ZnO nanodots on Si substate abailable have revealed a blue-shift due to the quantum mechanical effect.We have opend the research field oxide semiconductor nano-photonics. based on ZnO-based material systems.