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Imaging of electron spin density in coupled semiconductor nanostructures at^3 He temperatures

Imaging of electron spin density in coupled semiconductor nanostructures at^3 He temperatures
在 ^3 He 温度下耦合半导体纳米结构中的电子自旋密度成像
批准号:
17340093
负责人:
NOMURA Shintaro
金额:
$10.28万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2005
资助国家:
日本
项目状态:
已结题
起止时间:
2005 至 2007

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中文摘要
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英文摘要
One of the great advantages of semiconductor nanostructures is that the electronic states as well as spin states can be designed artificially. This enables us to prepare electronic states in semiconductor nanostructures which manifest novel physical properties. The purpose of this research is to detect novel correlated electronic sates in externally controllable semiconductor nanostructures. We have developed spatially resolved circularly-polarized spectroscopic system at low temperatures and at high magnetic fields. We have successfully developed a low temperature-high magnetic field-near field-scanning optical microscope operated at 70 mK. We have studied imaging of two dimensional electron system and quantum point contacts in high magnetic fields. We have obtained images of broad and narrow strips presumably reflect the diffusion of the optically created electrons in the bulk and the edge states in two dimensional electron system. We have determined of the electron and hole effective masses in perpendicular magnetic fields in the range between 1.5<r_s<6 by magneto-photoluminescence measurements. We find that the obtained effective masses increase with decrease in electron density. The oscillations of the photoluminescence peak energies are observed in quantum tubes depending on the magnetic flux through the tube. These oscillations in energies are shown to be due to the AB effect of a charged exciton in a quantum tube. Our research contributes to realize external control of novel correlated electronic sates in semiconductor nanostructures.
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Magneto-optical properties of electron-hole states in GaAs quantum wires
GaAs量子线中电子空穴态的磁光特性
DOI: --
发表时间: 2008
期刊: J. Phys. 38
影响因子: --
作者: [H., Tamura]
通讯作者: Tamura
Photoluminescence measurements in Be-σ-doped back-gated quantum well
Be-σ 掺杂背栅量子阱中的光致发光测量
DOI: --
发表时间: 2005
期刊: Surface Science 583
影响因子: --
作者: [M., Yamaguchi]
通讯作者: Yamaguchi
Variation in time of charged and neutral excitons photoluminescence intensities in photo-irradiated GaAs quantum well
光照射GaAs量子阱中带电和中性激子光致发光强度随时间的变化
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [S., Nomura, K. Matsuda, M. Yamaguchi, S. Nomura, S. Nomnura, M. Yamaguchi, S. Nomura, K.Matsuda, M.Yamaguchi, S.Nomura, S.Nomura, M.Yamaguchi, S.Nomura, S. Nomura, M. Yamaguchi, T. Akazaki, M. Yamaguchi, T. Itoh, M. Delbecq]
通讯作者: M. Delbecq
Aharonov-Bohm oscillation of chargex exciton energy in quantum tubes
量子管中电荷激子能量的阿哈罗诺夫-玻姆振荡
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [伊藤宙陛, 野村晋太郎, N. Hayashi, S. Noinura]
通讯作者: S. Noinura
59
    Investigations of transient quantum transport phenomena with an optical gate method
    • 批准号:
      21340076
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $12.56万
    • 财政年份:
      2009
    • 负责人:
      NOMURA Shintaro
    • 依托单位:
    Functional analysis of proteins belongs to SIBLING family in physiological and pathological calcification
    • 批准号:
      18590371
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.53万
    • 财政年份:
      2006
    • 负责人:
      NOMURA Shintaro
    • 依托单位:
    Functional analysis of the cells embedded in bone and cartilage matrices
    • 批准号:
      12470056
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $8.26万
    • 财政年份:
      2000
    • 负责人:
      NOMURA Shintaro
    • 依托单位:
    Analysis of Gene Expression Encoding Bone Matrix Proteins in Bone-Related Tumors
    • 批准号:
      11138232
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas (A)
    • 资助金额:
      $3.2万
    • 财政年份:
      1999
    • 负责人:
      NOMURA Shintaro
    • 依托单位:
    海外基金