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A Study of Plasma Chemistry in the Gas Phase and on Surfaces during Plasma Etching in Chlorine-and Bromine-Containing Plasmas

含氯和含溴等离子体蚀刻过程中气相和表面等离子体化学的研究

基本信息

批准号：
17340172
负责人：
ONO Kouichi
金额：
$ 9.66万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2005
资助国家：
日本
起止时间：
2005 至 2006
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17340172/
关键词：
Plasma Etching Plasma Chemistry Surface and Interfaces Semiconductor Fabrication Etched Profiles Transport of Reactive Particles Plasma Processing Etching

项目摘要

Chlorine-and Bromine-containing plasmas are now indispensable for the etching of silicon, metals, and metal oxides (high dielectric constant / high-k materials) in the fabrication of sub-0.1 μm devices. We have developed an atomic-scale model of the particle transport and surface reactions, to simulate the feature profile evolution for nanometer-scale control of the profile and critical dimensions during etching in chlorine-and bromine-containing plasmas. In the model, the substrates are taken to consist of a large number of small (or atomic-scale) cells or lattices, and the evolving interfaces are modeled by using the cell removal method. The model takes into account the transport of ions and neutrals in microstructures, along with surface reactions of ion-enhanced etching, chemical etching, surface reflection and penetration of ions, surface reemission of neutrals, surface oxidation, deposition of etch products and by-products, and removal of oxidized and deposited surfaces by sputte … More ring. The trajectory of ions on feature surfaces and in substrates is analyzed by the Monte Carlo calculation, based on the momentum and energy conservation for an incident ion through successive two-body elastic collisions with substrate atoms. The interaction potential is calculated using the quantum chemical scheme "Gaussian" for the Cl-Si and Br-Si system. The numerical results indicated that for the nanometer-scale control of etched profiles relies largely on a competitive formation of surface passivation layers through deposition of etch products/by-products and surface oxidation, and on a competition between the ion reflection and passivation layer formation on feature surfaces during etching.Moreover, we have developed in situ diagnostics of reactants and reaction products in the gas phase and on substrate surfaces during plasma etching, including laser-induced fluorescence (LIF), Fourier transform infrared (FTIR) absorption spectroscopy, and quadruple mass spectrometry (QMS), in addition to optical emission spectroscopy (OES) and Lagmuir probe measurement. We then investigated the etching of high-k gate materials Si, HfO_2, Pt and TaN in chlorine and bromine-containing plasmas, to gain a better understanding of the etching mechanisms concerned. Based on the numerical analysis and diagnostics, we found a highly selective etching process for HfO_2 over Si, without rf biasing or under low ion energy conditions. The numerical and experimental results implied that a competition between the etching and deposition on surfaces, together with a competition between the formation and quenching of surface inhibitors in the gas phase, is responsible for the phenomena observed. Less

在亚0.1 μm器件的制造中，含氯和溴等离子体是硅、金属和金属氧化物（高介电常数/高k材料）刻蚀不可或缺的。我们已经开发了一个原子尺度的粒子传输和表面反应的模型，模拟的轮廓和关键尺寸在含氯和溴的等离子体蚀刻过程中的纳米级控制的功能轮廓演变。在该模型中，衬底被认为是由大量的小（或原子尺度）的细胞或晶格，并通过使用细胞去除方法模拟不断演变的界面。该模型考虑了离子和中性粒子在微结构中的输运，沿着离子增强刻蚀、化学刻蚀、离子的表面反射和穿透、中性粒子的表面再发射、表面氧化、刻蚀产物和副产物的沉积以及刻蚀去除氧化和沉积表面等表面反应 ...更多信息戒指基于入射离子与衬底原子连续两体弹性碰撞的动量守恒和能量守恒，通过Monte Carlo计算分析了离子在特征表面和衬底中的运动轨迹。采用量子化学“高斯”方案计算了Cl-Si和Br-Si体系的相互作用势。数值结果表明，对于纳米尺度的蚀刻轮廓的控制在很大程度上依赖于通过蚀刻产物/副产物的沉积和表面氧化的表面钝化层的竞争性形成，以及在蚀刻期间特征表面上的离子反射和钝化层形成之间的竞争。我们已经开发了在等离子体蚀刻期间气相中和衬底表面上的反应物和反应产物的原位诊断，包括激光诱导荧光（LIF），傅里叶变换红外（FTIR）吸收光谱和四重质谱（QMS），以及光发射光谱（OES）和拉格缪尔探针测量。然后，我们研究了高k栅材料Si，HfO_2，Pt和TaN在含氯和溴等离子体中的刻蚀，以更好地理解相关的刻蚀机理。基于数值分析和诊断，我们发现了一个高选择性的HfO_2在Si上的刻蚀过程，没有射频偏置或在低离子能量条件下。数值和实验结果表明，腐蚀和沉积在表面上的竞争，以及在气相中的表面抑制剂的形成和淬火之间的竞争，是负责观察到的现象。少