Studies on Semiconductor Nanostructure Formed by Low-temperature Chemical Vapor Deposition and Application to Nanodevices

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Organic Thin Film Transistor (OTFT) memories with a nanocrystal carbon (nc-C) dots arranged in channel region were fabricated using a focused ion beam (FIB) system with a precursor of low energy Ga^+ ion and carbon source. The crystallinity of nc-C dots was investigated by Raman spectroscopy and atomic force microscopy (AFM). Raman spectra indicate the evidence of crystallization of nc-C after annealed at 600℃ by the sharp peak at 1565 cm^<-1> in graphite (sp^2), while no peak of diamond (sp^3) could be seen at 1333 cm^<-1>. The AFM images showed the nc-C dots controlled with diameter of 100 nm. The above results revealed that the nc-C dots had sufficiently stick onto SiO_2 films. The hysterisis loop in the threshold voltage characteristics appeared in the device in which voltage shift is 0.32 V after charge injection into the nc-C dots.. In next stage, we will analyze the erase step and retention characteristics.