Zinc oxide nanoparticles fabricated by ion implantation and thermal oxidation and the optical properties

离子注入热氧化法制备氧化锌纳米粒子及其光学性能

• 批准号: 18510102
• 负责人: AMEKURA Hiroshi
• 金额: $ 2.42万
• 依托单位: National Institute for Materials Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18510102/
• 关键词: Qutantum Beam; Ion Implantation; Nanoparticle; ZinC Oxide; Optical Property; Quantum Dot; Nanomaterial; Composite material

This study consists of three sub-themes, i.e., (1) Formation processes of ZnO nanoparticles (NPs), (2) High density excitation effects on ZnO NPs, and (3) an attempt for size control of ZnO NPs.(1) Formation processes of ZnO NPsZn NPs were formed in silica glass samples by Zn+ ion implantation of 60 keV. After then the samples including Zn NPs were annealed in oxygen gas to oxidize the Zn NPs to ZnO NPs. The transformation from Zn NPs to ZnO NPs was evaluated by. UV-Vis optical absorption spectroscopy, glancing angle incident x-ray diffraction, cross-sectional transmission electron microscopy, Rutherford backscattering spectrometry. One of the striking results is that Zn NPs formed inside the silica glass move toward the surface of the glass and transform to ZnO NPs on the surface of the glass.(2) High density excitation effects on ZnO NPsFirst, photoluminescence (PL) measurements of ZnO NPs using a time-resolved PL measurement system using a nitrogen laser was carried out, but the sensitivity was too low to detect PL of our samples. We have built a new measurement system using YAG laser and ICCD detector, and succeeded in the observation of PL spectra under high-density pulsed laser excitation. The exciton PL showed a saturated excitation intensity dependence at room temperature.(3) An attempt for size control of ZnO NPs.Size control of Zn and ZnO NPs by changing the fluence was examined. In as-implanted state, the average size of Zn NPs increases with the fluence between 5 and 10×10^<16>ions/cm2. Above 10×10^<16>ions/cm2, the average size showed a saturation behavior due to surface sputtering. After the oxidation annealing, the samples implanted to 2×10^<16>ions/cm2 or less mainly transformed to Zn_2SiO_4 phase instead of ZnO NPs.

本研究由三个子主题组成，即（1）ZnO纳米粒子（NPs）的形成过程，（2）ZnO NPs的高密度激发效应，以及（3）ZnO NPs尺寸控制的尝试。（1）ZnO NPs的形成过程通过60 keV的Zn+离子注入在石英玻璃样品中形成Zn NPs。然后，将包含Zn NP的样品在氧气中退火以将Zn NP氧化成ZnO NP。从 Zn NPs 到 ZnO NPs 的转化进行了评估。紫外-可见光吸收光谱、掠射角入射 X 射线衍射、截面透射电子显微镜、卢瑟福背散射光谱测定。其中一个引人注目的结果是，在石英玻璃内部形成的Zn NPs向玻璃表面移动，并在玻璃表面转化为ZnO NPs。(2)对ZnO NPs的高密度激发效应首先，使用氮激光的时间分辨PL测量系统对ZnO NPs进行了光致发光(PL)测量，但灵敏度太低，无法检测我们的PL。 样品。我们利用YAG激光器和ICCD探测器构建了新型测量系统，并成功观测了高密度脉冲激光激发下的PL光谱。激子PL在室温下表现出饱和的激发强度依赖性。(3)ZnO NPs尺寸控制的尝试。研究了通过改变注量来控制Zn和ZnO NPs的尺寸。在注入状态下，Zn NPs的平均尺寸随着注量在5和10×10^ 16 ions/cm2之间而增加。高于10×10 16 离子/cm 2 ，平均尺寸由于表面溅射而表现出饱和行为。氧化退火后，注入量为2×10^<16>ions/cm2以下的样品主要转变为Zn_2SiO_4相而不是ZnO NPs。

项目成果

Dual surface plasmon resonances in Zn nanoparticles in SiO2: an experimental study based on optical absorption and thermal stability

• DOI: 10.1088/0957-4484/18/39/395707
• 发表时间: 2007-10
• 期刊: Nanotechnology
• 影响因子: 3.5
• 作者: H. Amekura;N. Umeda;K. Kono;Y. Takeda;N. Kishimoto;C. Buchal;S. Mantl

Ch. Buchal, S. Mantl, Embedment of ZnO nanoparticlse in SiO2 by ion implatation and low-temperature oxidation.

章。

• 发表时间: 2007
• 期刊: Appl. Phys. Lett. 90
• 作者: H. Amekura;N. Umeda;H. Boldyryeva;N. Kishimoto
• 通讯作者: N. Kishimoto

Optical transitions of Cu2O nanocrystals in SiO2 fabricated by ion implatation and two-step annealing.

通过离子注入和两步退火制备的 SiO2 中 Cu2O 纳米晶体的光学跃迁。

• 发表时间: 2006
• 期刊: Appl. Phys. Lett. 89
• 作者: H. Amekura;N. Umeda;Y. Takeda;N. Kishimoto
• 通讯作者: N. Kishimoto

Formation of CuO and Cu_2O Nanoparticles by Ion Implantation and Subsequent Thermal Oxidation.

通过离子注入和随后的热氧化形成 CuO 和 Cu_2O 纳米颗粒。

• 发表时间: 2008
• 作者: H.Boldyryeva,雨倉 宏;岸本直樹
• 通讯作者: 岸本直樹

Functional surface nanostructures fabricated by metal-ion implantation and thermal oxidation.

通过金属离子注入和热氧化制备功能性表面纳米结构。

• 发表时间: 2007
• 作者: Tsuji;T.;Thang;D-H.;Nakanishi;M.;Okazaki;Y.;Tsuboi;Y.;Tsuji;M;H.Amekura,H.-S.Wang,S.Hishita,N.Umeda,N.Kishimoto,Ch.Buchal,and S.Mantl
• 通讯作者: H.Amekura,H.-S.Wang,S.Hishita,N.Umeda,N.Kishimoto,Ch.Buchal,and S.Mantl