Research on High Efficiency Photocatalyst for Optoelectronic Devices

光电器件用高效光催化剂的研究

• 批准号: 18560041
• 负责人: SAITOH Tadashi
• 金额: $ 1.86万
• 依托单位: Kansai University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18560041/
• 关键词: semiconductors; optical properties; photocatalyst; 半導体物性; 物性実験; 表面・界面物性

The oxide of titanium or the tungsten films deposited using the arc plasma evaporation are characterized. We describe here mainly the results on tungsten oxide films.1. The titanium oxide films deposited under the lower oxygen partial pressure conditions during the evaporation showed the contact angle of water being smaller. This is thought the hydrophilic surface was obtained even under the room light in the case of titanium oxide films formed under less oxygen pressure conditions which include many oxygen deficiencies.2. In case of tungsten oxide, the contact angle of water does not depend on the oxygen partial pressure during evaporation. There is a possibility that the hydrophilic surface was obtained even under the room light irradiation.3. As for the tungsten oxide films formed with the arc plasma evaporation, the X-ray diffraction patterns indicated that they are tungsten trioxide films of which the activity as a photocatalyst is the strongest in tungsten oxides.4. We estimated the energy-band gap of the heat-treated tungsten-oxide films by measuring the absorbance spectra. The processing temperature dependence of the band-gap energy was small, ranging from 2.6 to 2.9eV. These values are in good agreement with the reported values of the energy-band gap of tungsten trioxide, 2.6〜2.8eV. This result also suggests that it is possible to form tungsten trioxide using the arc plasma evaporation.As described above, we conclude that it is possible to form the tungsten-trioxide films, which exhibit the most strong photocalytic reaction under the visible light irradiation, using the arc plasma evaporation.

对电弧等离子体蒸发法制备的钛氧化物和钨氧化物薄膜进行了表征。我们在这里主要描述的结果对氧化钨薄膜。1.在蒸发过程中在较低氧分压条件下沉积的氧化钛膜显示出水的接触角较小。这被认为是即使在室内光的情况下，在包括许多缺氧的低氧压条件下形成的氧化钛膜的情况下也获得亲水表面。在氧化钨的情况下，水的接触角不依赖于蒸发过程中的氧分压。存在即使在室内光照射下也获得亲水表面的可能性。对于用电弧等离子体蒸发形成的氧化钨膜，X射线衍射图表明它们是三氧化钨膜，其作为光催化剂的活性在氧化钨中是最强的.我们通过测量吸收光谱估算了热处理后氧化钨薄膜的能带隙。的带隙能量的加工温度依赖性是小的，范围从2.6至2.9eV。这些值与文献报道的三氧化钨的带隙值2.6 ~ 2.8eV一致。如上所述，我们得出结论，可以使用电弧等离子体蒸发形成在可见光照射下表现出最强的光催化反应的三氧化钨膜。

项目成果

電子材料ハンドブック

电子材料手册

• 发表时间: 2006
• 作者: Sato;T.;et al.;佐藤尚志 他;大西恭子 他;Sun Young Kim et al.;佐藤尚志 他;西岡 求 他;L.J.Diguna;Q.Shen;Q.Shen;Q.Shen;H.Nakajima;T.Toyoda;T.Toyoda;Q.Shen;L.J.Diguna;T.Toyoda;T.Toyoda;豊田 太郎(編集・共著)
• 通讯作者: 豊田 太郎(編集・共著)