Optical and electrical properties of oxide semiconductors and their applications to ultra-violet sensors

氧化物半导体的光电特性及其在紫外传感器中的应用

• 批准号: 20560018
• 负责人: SAITOH Tadashi
• 金额: $ 2.75万
• 依托单位: Kansai University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20560018/
• 关键词: 半導体; 酸化物半導体; 光デバイス; ソーラーブラインド; 光物性; 半導体物性; 物性実験

We studied on the optical and electrical properties of oxide semiconductors and their applications to solar-blind UV detectors. The photoconductor device made of sol-gel synthesized gallium oxide film operated as a solar blind device showing its sensitivity in a wavelength range of 245-260nm. We also studied .Zr1-_xTi_xO_2as a material whose optical band-gap can be controlled by the molar fraction of Zr and Ti. We showed .Zr1-_xTi_xO_2is promising as solar-blind materials showing that their band-gap can be controlled in the range of 3.6-5.2eV, including the solar-blind range.

本文研究了氧化物半导体的光电性质及其在日盲紫外探测器中的应用。由溶胶-凝胶法合成的氧化镓薄膜制成的光电导体器件在245- 260 nm波长范围内表现出作为日盲器件的灵敏度。我们还研究了Zr_（1-x）Ti_xO_2作为一种光学带隙可由Zr和Ti的摩尔分数控制的材料。结果表明，Zr_（1-x）Ti_xO_2具有良好的日盲性能，其禁带宽度可控制在3.6-5.2eV范围内，包括日盲区。