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Fabrication of Mg2Si thermal-to-electric energy conversion device using die-casting sysnthesis method

压铸合成法制造Mg2Si热电能量转换装置

基本信息

批准号：
18560285
负责人：
IIDA Tsutomu
金额：
$ 2.48万
依托单位：
Tokyo University of Science
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18560285/
关键词：
SiGe Solar cell Environmentally-benign Thermoelectric 結晶育成太陽電池

项目摘要

With the spread of solar-cell power generation, the demand for solar cells with higher conversion efficiency is increasing. It is necessary that the materials which can be used for energy-conversion applications should be environmentally-benign semiconductors, namely, they possess the advantages of abundance of their constituent elements and non-toxicity of their processing by-products. Sil-xGex alloys is known as a candidate material for producing carrier multiplication (Auger generation), which allows a conversion efficiency of 30% when the Ge amount is about 68%. Sil-xGex alloys are important materials not only for microelectronic devices but also for solid-state power generators such as solar cells and thermoelectric devices, because of their chemical stability, mechanical strength at elevated temperatures, and a close match of the n-/p-type alloys in terms of their thermal and electrical characteristics enable better device operation. However, since the Si-Ge system shows a comple … More te series of solid solutions with a phase relationship, it is not easy to precipitate crystals possessing a certain composition of silicon or germanium selectively by using conventional Bridgman, Czochralski and floating-zone methods.So far, we have performed bulk crystals growth of Sil-xGex using an advanced version of the Bridgman technique combined with a die-casting growth method, but precise and reproducible control of their compositional uniformity and thickness were not accomplished. In order to realize Sil-xGex wafer with an arbitrary composition, we have developed a new method of preparing Sil-xGex by a wafer-proximity method. This method enables to form bulk polycrystalline Sil-xGex with x=0.3~0.7, with slight deviation of ?}0.5% for the compositional uniformity. The grown Sil-xGex crystals obtained were 15x15 mm2 and 3 mm thick. The wafer-proximity method allows the control of the wafer thickness and composition x by simply changing the growth temperature and the duration. The microstructure of the samples was analyzed by using an optical microscope, and their composition was determined by electron-probe microanalysis. For the grown specimens room temperature photoconductivity measurement was carried out. The room temperature I-V characteristics of the samples, which possess pn junction by phosphorus doping using phosphor silicate glass (PSG) were measured using a solar-simulator. The obtained results imply that the newly developed wafer-proximity growth technique can fabricate bulk Sil-xGex (x~0.6-0.7) crystal for Auger generation in a reproducible manner. Less

随着太阳能电池发电的普及，对转换效率更高的太阳能电池的需求不断增加。可用于能量转换应用的材料必须是对环境无害的半导体，即具有其组成元素丰富和加工副产品无毒的优点。硅- xgex合金被认为是产生载流子倍增（俄歇生成）的候选材料，当Ge量约为68%时，其转换效率可达30%。硅- xgex合金不仅是微电子器件的重要材料，也是固态发电机（如太阳能电池和热电器件）的重要材料，因为它们的化学稳定性，高温下的机械强度，以及在热学和电学特性方面与n /p型合金的密切匹配，使设备运行更好。然而，由于Si-Ge体系呈现出复杂的、具有相关系的固溶体系列，采用传统的Bridgman法、Czochralski法和浮选区法很难选择性地析出具有一定组成的硅或锗晶体。到目前为止，我们已经使用先进的Bridgman技术结合压铸生长方法进行了Sil-xGex的块状晶体生长，但没有实现对其成分均匀性和厚度的精确和可重复控制。为了实现任意组成的Sil-xGex晶圆，我们开发了一种用晶圆接近法制备Sil-xGex晶圆的新方法。该方法可制得尺寸为x=0.3~0.7的块状多晶si - xgex，其组成均匀性偏差为0.0.5%。得到的生长的si - xgex晶体的厚度分别为15x15mm2和3mm。晶圆邻近法允许通过简单地改变生长温度和持续时间来控制晶圆厚度和成分x。用光学显微镜分析了样品的微观结构，用电子探针微量分析测定了样品的成分。对生长后的试样进行了室温光电导率测量。利用太阳模拟器测量了磷掺杂磷硅酸盐玻璃（PSG）具有pn结的样品的室温I-V特性。研究结果表明，新开发的晶圆邻近生长技术可以再现地制备出用于俄歇生成的块状Sil-xGex （x~0.6 ~ 0.7）晶体。少

项目成果

期刊论文数量（0）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Design and evaluation of n-type Si1-xGex for thermoelectric-conversion material

n型Si1-xGex热电转换材料的设计与评估

DOI：
发表时间：
期刊：
Thermoelectric Power Generation (Mater. Res. Soc. Proc. Vol. 1044), ed. by T. P. Hogan, J. Yang, R. Funahashi, T. Tritt, (Mater. Res. Soc.. 2008)
影响因子：
0
作者：
1. T. Imai;T. lida;Y. Miyata;T. Itoh;H. Funashima;Y. Takanashi;N. Hamada
通讯作者：
N. Hamada

Bulk crystalline photovoltaic Si1-xGex (x=0.3~0.8) by using a die-casting growth method

采用压铸生长方法的体晶光伏Si1-xGex (x=0.3~0.8)

DOI：
发表时间：
2006
期刊：
Proceedings 21st European Photovoltaic Solar Energy Conference Dresden Germany
影响因子：
0
作者：
T. Baba;T. Iida;M. Akasaka;T. Itoh;Y. Miyata;Y. Takanashi;S. Sakuragi
通讯作者：
S. Sakuragi

Composition dependent thermoelectric properties of sintered Mg2Sil-xGex (x= 0 to 1) initiated from melt-grown polycrystalline source

由熔融生长多晶源引发的烧结 Mg2Sil-xGex (x= 0 到 1) 的热电性能与成分相关