Epitaxial growth and fabrication of microcavities by the helicon-wave-excited-plasma sputtering method

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A cavity polariton laser is attracting attention as a new generation coherent light source composed of a semiconductor microcavity. In the present research, epitaxial growth of single crystalline ZnO and MgZnO films exhibiting atomically flat surfaces and abrupt heterointerfaces was carried out using an uniquely designed 'helicon-wave-excited-plasma sputtering epitaxy (HWPSE)' method, in order to assess if ZnO microcavities can be prepared by the method. The epilayer properties resemble those of the films grown using conventional advanced epitaxial growth methods such as molecular beam epitaxy and metalorganic vapor phase epitaxy. In addition, anatase phase Nb-doped TiO_2 films, a new transparent conducting oxide having the refractive index close to GaN, were epitaxially grown. The findings that those new functional semiconductor epilayers can be grown by the inexpensive HWPSE method may cut open the way to fabricate semiconductor heterostructure quantum devices at a low price.