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Helicon-wave-excited-plasma sputtering epitaxy of polariton laser structures for room temperature operation

Helicon-wave-excited-plasma sputtering epitaxy of polariton laser structures for room temperature operation
用于室温操作的偏振激元激光器结构的螺旋波激发等离子体溅射外延
批准号:
22246037
负责人:
CHICHIBU Shigefusa
金额:
$30.04万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010-04-01 至 2014-03-31

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项目成果

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中文摘要
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英文摘要
A cavity-coupled exciton-polariton laser, namely cavity-polariton laser, has been attracting attention as a new generation low-threshold current density coherent light source composed of a semiconductor microcavity. In the present research, a microcavity composed of a ZnO active region sandwiched by pairwise distributed Bragg reflectors (DBRs) that most likely operates at room temperature was fabricated using a uniquely designed Helicon-Wave-Excited Plasma Sputtering (HWPS) method, which enables to grow high quality epitaxial semiconductor films. We eventually observed an enhanced emission peak at around 3.25 eV, which originates from an exciton-polariton emission coupled with a cavity mode. We therefore conclude that a way to fabricate new functional quantum heterostructures and to characterize them was cut open using the growth, fabrication, and characterization methods developed by this research project.
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Signatures of Γ1-Γ5 mixed-mode polaritons in polarized reflectance spectra of ZnO
ZnO偏振反射光谱中1-5混合模式极化激元的特征
DOI: 10.1088/0953-8984/24/41/415801
发表时间: 2012
期刊: Journal of Physics: Condensed Matter
影响因子: --
作者: [A. Takagi, A. Nakamura, A. Yoshikaie, S. Yoshioka, S. Adachi, S. F. Chichibu, and T. Sota]
通讯作者: and T. Sota
水熱合成ZnOターゲットを用いたZnO薄膜のヘリコン波励起プラズマスパッタエピタキシー(2)
使用水热合成 ZnO 靶材进行 ZnO 薄膜的螺旋波激发等离子体溅射外延 (2)
DOI: --
发表时间:
期刊:
影响因子: --
作者: [Ken Someno, Kouichi Usami, Tetsuo Kodera, Yukio Kawano, Mutsuko Hatano, Shunri Oda, 古澤健太郎,中沢駿仁,石川陽一,田代公則,秩父重英]
通讯作者: 古澤健太郎,中沢駿仁,石川陽一,田代公則,秩父重英
Spatio-time-resolved cathodoluminescence study using a femtosecond focused electron beam on freestanding GaN substrates grown by hydride vapor phase epitaxy
使用飞秒聚焦电子束在氢化物气相外延生长的独立式 GaN 衬底上进行时空分辨阴极发光研究
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [S. F. Chichibu, Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, S. Nagao, K. Fujito, and A. Uedono]
通讯作者: and A. Uedono
フェムト秒パルス電子線を用いた窒化物半導体の時間・空間分解カソードルミネッセンス計測
使用飞秒脉冲电子束对氮化物半导体进行时间和空间分辨阴极发光测量
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [川嶋 愛, 田口哲広, 及川直大, 成田晋也, 山田 弘, 秩父重英]
通讯作者: 秩父重英
65
    Modification of the bandgap of hexagonal BN and deep-ultraviolet luminescence dynamics of excitons in them
    • 批准号:
      20K20993
    • 项目类别:
      Grant-in-Aid for Challenging Research (Exploratory)
    • 资助金额:
      $4.16万
    • 财政年份:
      2020
    • 负责人:
      CHICHIBU Shigefusa
    • 依托单位:
    Development of a spatio-time-resolved cathodoluminescence spectroscopy technique applicable for wide bandgap semiconductors through the generation and focusing of high-brightness femtosecond pulsed photoelectron beams
    • 批准号:
      23656206
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.5万
    • 财政年份:
      2011
    • 负责人:
      CHICHIBU Shigefusa
    • 依托单位:
    Epitaxial growth and fabrication of microcavities by the helicon-wave-excited-plasma sputtering method
    • 批准号:
      19360137
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $10.65万
    • 财政年份:
      2007
    • 负责人:
      CHICHIBU Shigefusa
    • 依托单位:
    Development of oxide semiconductor and dielectric electronics using helicon-wave-excited-plasma sputtering methods
    • 批准号:
      16360146
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $6.14万
    • 财政年份:
      2004
    • 负责人:
      CHICHIBU Shigefusa
    • 依托单位: