Development of a spatio-time-resolved cathodoluminescence spectroscopy technique applicable for wide bandgap semiconductors through the generation and focusing of high-brightness femtosecond pulsed photoelectron beams

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To probe local carrier dynamics in wide bandgap semiconductors such as AlN and high AlN mole fraction AlGaN alloys, the use of spatio-time-resolved cathodoluminescence (STRCL) technique offering high spatial and temporal resolutions is preferred, becauseelectron beams can be focused and implanted into sub-micrometer to nanometer regions of interest. In this study, we succeeded in developing a novel front-excitation type high-brightness pulsed photoelectron (PE)- gun driven by femtosecond laser pulses, and the STRCL measurement system equipped with this PE-gun was used to measure the local emission dynamics in GaN, AlN, and high AlN mole fraction AlGaN alloys.