Real-Time Scanning Tunneling Microscopy of Nano-Scale Surface Modification by Dopant Ion Irradiation

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A scanning tunneling microscope system has been developed to observe in real-time the surface modification induced by ion irradiation for the purpose of understanding atomistic behaviors of implanted dopant atoms in nano-scale semiconductor devices. We have succeeded in imaging the formation and annihilation processes of ion-induced structures on thermally treated and passivated silicon surfaces. Basic studies have also been performed experimentally and by using computer simulations on electronic conduction mechanisms in future nano-scale three-dimensional devices.