Fabrication of semiconductor nano-scale structures and control of its electrical characteristics by means of quantum doping

通过借助于单离子注入（SII）注入少量掺杂剂原子，已经第一次尝试了微调对应于半导体器件中的有源区的精细电阻器的电特性的固有波动，这使得我们能够将掺杂剂离子一个接一个地注入精细半导体区中，直到达到必要的数量。首先，在亚微米级硅电阻中，每一个掺杂原子的电导增加量为18 nS/atom。其次，采用传统的器件制作工艺制作了亚微米级的测试电阻，得到了测试电阻的电导统计分布。初始电导与平均值有相当大的偏差，估计为63%。最后根据实验得到的每个离子的电导增量，确定了在初始电导分布的较高侧，将电导值修整到某一值所需的单个离子数 ...更多信息 植入每个测试电阻器。发现初始电导波动63%已成功地降低到仅13%。该结果导致的结论是，在精细的半导体区域中的电性能可以通过以一个接一个的方式通过SII注入必要数量的掺杂剂原子来控制。结果发现，基于各种波动因素分析的值比实验值大13%。结果表明，在单离子注入间隔为0.3μm的样品中，杂质位置的涨落被高估了，而实际上杂质位置并不是随机的。我们期望通过提高SII单离子入射的瞄准精度来实现更好的杂质位置之间的相关性，从而引起更小的位置波动。这项研究澄清了一个基本问题，不仅控制杂质原子的数量，而且他们的位置首次实验。少

Trimming of the inherent fluctuation in electrical properties of a fine resistor which corresponds to an active region in semiconductor devices has been tried for the tirst time by implanting a small number of dopant atoms by means of single ion implantation (SII) which enables us to implant dopant ions one by one into a fine semiconductor region until the necessary number is reached. Firstly the conductance increase per one dopant atom in a sub-μm scale Si resistor was measured to be 18 nS/atom. Secondly very fine test resistors with a size of sub-μm were made by conventional device fabrication technology and the statistical distribution of conductance in the test devices was obtained. The initial conductance deviated considerably from the mean value, evaluated to be 63%. Finally based on the experimental increment of conductance per an ion, the number of single ions necessary to trim the conductance value into a certain value in the higher side of the initial conductance distribution … More was implanted to each test resistor. It was foud that the initial conductance fluctuation of 63% has been successfully reduced to only 13%. This result leads to the conclusion that the electrical properties in a fine semiconductor region can be controlled by implanting a necessary number of dopant atoms by SII in one-by-one manner. It was discovered that the value based on the analysis of various factors of fluctuation was larger than the experimental one, 13%. The reason for the large discrepancy was believed to be due to the overstimation of impurity position fluctuation in the specimens in which single ions were implanted at an interval of 0.3μm and the impurity position was not random in reality. We expect that a better correlation between impurity positions to be achieved by higher aiming precision of single ion incidence with SII would cause a smaller position fluctuation. This study clarifies an essential issue of controlling not only the impurity atom number but also their positions experimentally for the first time. Less