权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Doping by single Ion Implantation and its application to solid state materials and devices.

单离子注入掺杂及其在固态材料和器件中的应用。

基本信息

批准号：
05101003
负责人：
OHDOMARI Iwao
金额：
$ 143.36万
依托单位：
Waeda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Specially Promoted Research
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05101003/
关键词：
Single Ion Single Ion Implantation FIB point defect material control positron annihilation ultrafine structure surface structural phase transition 物性制御

项目摘要

Development of the single ion implantation (SII) was conducted for the purpose of implanting accurate number of dopant ions one by one into ultra fine semiconductor structures. By evaluating the number of implanted ions and detection efficiency of the single ion incidence, the SII has been proven to be effective in suppressing the fluctuation in dopant number 50% less than the conventional ion implantation.Immunity of VLSIs against transient malfunction induced by single ion irradiation was investigated using single ion microprobe technique, and sensitive site in the VLSIs and mechanism of the malfunction have been identified.Damages introduction with ion irradiation and subsequent anisotropic etching have yielded Si nano-wires successfully.The enhanced gold plating was observed at the nano-modified silicon surface using SII.The temperature dependence of Schottky barrier I-V characteristics revealed that near surface damages in Si introduced by ion irradiation reduced the Schottky barrier height due to fermi level position at the metal-semiconductor interface.Ion implantation induced defects were investigated by positron annihilation technique and the relationship between their depth profile and ion species was clearly established.For the next stage intense positron beam, high efficiency positron moderators were developed together with the use of ^<60>C source. At present, the result that guarantees the thousand times high efficiency moderation was obtained.Processes of oxidation, H_2 desorption and adsorption of alkaline metals on Si surfaces have been clarified using molecular orbital calculations. Energy changes along the 7x7 formation steps and the effect of oxygen atoms was calculated.Dynamic growth steps of the DAS domains were precisely observed in-situ using high temperature STM.Isolated DAS domains nucleated or annihilated with a single stacking fault triangle as a building unit and the critical nucleus size for growth was revealed.

为了将精确数目的掺杂离子逐个注入到超精细半导体结构中，开展了单离子注入技术的研究。通过对注入离子个数和单离子入射探测效率的评估，证明SII能有效地抑制掺杂个数的波动，比传统的离子注入少50%。利用单离子微探针技术研究了VLSI对单离子辐照引起的瞬时故障的免疫性，利用离子辐照和随后的各向异性刻蚀，在纳米改性硅表面观察到了增强的镀金层。肖特基势垒I-V特性的温度依赖关系表明，离子辐照在硅中引入的近表面损伤由于费米能级在金属-半导体界面的位置而降低了肖特基势垒高度。用正电子湮没技术研究了离子注入引起的缺陷，并明确地建立了它们的深度分布与离子种类的关系。对于下一阶段的强正电子束，高效率正电子慢化器是与^&lt的使用一起发展起来的；60&gt；C来源。通过分子轨道计算，阐明了碱金属在硅表面的氧化、氢脱附和吸附过程。计算了7×7形成步骤中的能量变化和氧原子的影响。利用高温扫描电子显微镜原位观察了DAS磁畴的动态生长过程。以单个层错三角形为构建单元，对孤立的DAS磁畴进行了成核或湮灭，揭示了生长的临界核尺寸。