权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Effect of impurity on Si(111)-7*7 self-organization

杂质对Si(111)-7*7自组织的影响

基本信息

批准号：
09450022
负责人：
OHDOMARI Iwao
金额：
$ 6.02万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1998
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450022/
关键词：
Si(111) 7*7 Nano-structure Self organization Surface modification STM In situ observation Ion irradiation Oxygen RHEED 極高真空構造相転移

项目摘要

1 Influence of oxygen on the formation of Si(lll)-7*7 domainsThe transient aspects of Si(lll)7*7 reconstruction after laser irradiation were observed under the experimental condition of different Si substrate temperature and 0_2 pressure. The 7*7 growth was suppressed easily under higher 0_2 pressure and lower temperature. By means of in situ STM observation of the process, we have found that the preferential oxidation of the unreconstructed disordered region on the surface result in the suppression of the 7*7 growth.The 7*7 coverage on the quenched surfaces was measured as a formation of cooling speed for the two types of Si wafers with different oxygen concentration with STM.The 7*7 coverage of the sample with higher oxygen concentration was higher than that of the sample with lower oxygen concentration, which suggested that oxygen had an influence on the formation of the 7*7 structure.A novel inter-atomic potential energy function for Si, 0 mixed systems was developed to realize mol … More ecular-dynamics studies on the roles of 0 atoms in the 7*7 reconstruction. By molecular orbital calculations, we clarified that 0 atoms lowered the energetic barrier to form the 7*7 structure.2 In situ observation of the Si surface modification by ion irradiation using an ion-source /STM combined systemIn situ real-time high temperature observation of Si (111) 7*7 surface during ion irradiation in ultra high vacuum was performed for the first time using the ion-source / STM combined system. Sequential STM images of the high temperature surface showed structural change in the surface atomic arrangement before and after ion irradiation.3 Wafer scale fabrication of nano-structures on Si(lll) surfaceCorrelation between the surface atomic arrangement and the preferential adsorption site of Cu in a wet-process was investigated. For Cu deposition on hydrogen-terminated Si (111) surface, Cu mano-wires of -50 nm wide were observed in a narrow window of Si potential. We found that Cu nano clusters precipitate at dihydride Si atoms but not at mnonohydride Si atoms. Less

1 氧对Si(III)-7*7畴形成的影响在不同Si衬底温度和0_2压力的实验条件下，观察了激光照射后Si(III)7*7重构的瞬态方面。在较高的0_2压力和较低的温度下很容易抑制7*7的生长。通过原位STM观察过程，我们发现表面未重构无序区域的优先氧化导致了7*7生长的抑制。用STM测量了两种不同氧浓度的硅片在淬火表面的7*7覆盖率作为冷却速度的形成。氧浓度较高的样品的7*7覆盖率高于低浓度样品的7*7覆盖率。较低的氧浓度，这表明氧对7*7结构的形成有影响。开发了一种新颖的Si,0混合体系的原子间势能函数，以实现0原子在7*7重构中的作用的分子动力学研究。通过分子轨道计算，我们明确了0个原子降低了能垒，形成了7*7结构。2离子源/STM组合系统对Si(111)7*7表面离子辐照改性的原位观察利用离子源/STM组合系统首次对超高真空下离子辐照过程中Si(111)7*7表面的高温原位实时观察系统。高温表面的连续STM图像显示离子辐照前后表面原子排列的结构变化。3 Si(III)表面纳米结构的晶圆级制造研究了湿法工艺中表面原子排列与Cu优先吸附位点之间的相关性。对于氢封端的 Si (111) 表面上的 Cu 沉积，在窄的 Si 电势窗口中观察到 -50 nm 宽的 Cu 纳米线。我们发现 Cu 纳米簇在二氢化物 Si 原子上沉淀，但在一氢化物 Si 原子上不沉淀。较少的