Accurate measurements of the second-order nonlinear-optical coefficients of SiC

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We have accurately measured the second-order nonlinear-optical coefficients of SiC, which is expected to be a material for next-generation high-power frequency-conversion devices. We carried out the measurements with several combinations of different manufacturers, polytypes, surface orientations of the samples, and different measurement techniques at the fundamental wavelength of 1.064 μm. The same accurate values were obtained for the same polytype samples, and d33 of 4H-SiC was found to be 6 % smaller than that of 6H-SiC. The magnitudes of the nonlinear-optical coefficients determined in this research should be useful for precise design of high-power and highly efficient frequency-conversion devices using SiC.