Shape formation in silicon surface by transfer photo-etching using solid phase reaction at fluorination agent-silicon interface.

利用氟化剂-硅界面处的固相反应，通过转移光刻在硅表面形成形状。

• 批准号: 20560107
• 负责人: UCHIKOSHI Junichi
• 金额: $ 3万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2010
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20560107/
• 关键词: フッ素化剤; N-フルオロピリジニウム塩; 光エッチング; 光転写; シリコン; 3次元形状; 半導体表面; 形状創成; 塗布; エッチング; インクジェット; 半導体; 表面; 界面

A new photo-etching method with N-fluoropyridinium salts is proposed in this study. Si is etched by applying N-fluoropyridinium salts to its surface and exposing the surface to light. The etched surface using liquid N-fluoropyridinium salts is smoother than that using solid N-fluoropyridinium salts. The etching depth increases with exposure time. H-terminated hydrophobic Si is easier to etch than OH-terminated hydrophilic Si. SiF_4 is produced by photo-etching. The number of processes in the new photo-etching method is fewer than that in the lithography and etching. The etching depth increases with light intensity. A ditch with different depths and a spherical surface are formed by exposing to light with different intensities at a time. It is expected to form arbitrary three-dimensional shape in a silicon surface by controlling light intensity distribution.

本研究提出了一种新的N-氟吡啶盐光刻方法。硅的刻蚀是通过将N-氟吡啶盐应用于其表面并将其表面暴露在光中来进行的。与固体N-氟吡啶盐相比，液态N-氟吡啶盐的腐蚀表面更为光滑。刻蚀深度随曝光时间的延长而增加。氢端的疏水硅比氢端的亲水硅更容易刻蚀。SiF_4是用光刻法制备的。与光刻和刻蚀相比，新的光刻方法的工艺次数更少。刻蚀深度随光强的增加而增加。不同深度的沟渠和球面是通过一次暴露在不同强度的光中形成的。通过控制光强分布，有望在硅表面形成任意的三维形状。

项目成果

Photoetching of Silicon by N-Fluoropyridinium Salt

• DOI: 10.1149/1.3481770
• 发表时间: 2010-11
• 期刊: Electrochemical and Solid State Letters
• 作者: K. Tsukamoto;J. Uchikoshi;Shigeharu Goto;T. Kawase;Noritaka Ajari;T. Nagai;K. Adachi;Kenta Arima;M. Morita

特許権

专利权

• 发表时间: 2018

Absolute Line Profile Measurements of Silicon Plane Mirrors by Near-Infrared Inte rferometry

近红外干涉测量硅平面镜的绝对线轮廓

• 发表时间: 2008
• 期刊: Japanese Journal of Applied Physics 47
• 作者: Junichi UCHIKOSHI;Amane TSUDA;Noritaka AJARI;Taichirou OKAMOTO;Kenta ARIMA;Mizuho MORITA
• 通讯作者: Mizuho MORITA

Formation of Three-Dimensional Shape in Silicon by Photo-etching withN-Fluoropyridinium Salts

N-氟吡啶盐光刻在硅中形成三维形状

• 发表时间: 2009
• 作者: K.Tsukamoto;J.Uchikoshi;S.Goto;T.Nagai;K.Adachi;K.Arima;M.Morita
• 通讯作者: M.Morita

Formation of Three-Dimensional Shape in Silicon by Photo-etching with N-Fluoropyridinium Salts

N-氟吡啶鎓盐光刻在硅中形成三维形状

• 发表时间: 2009
• 作者: K.Tsukamoto;J.Uchikoshi;S.Goto1;T.Nagai;K.Adachi;K.Arima;M.Morita
• 通讯作者: M.Morita