Shape formation in silicon surface by transfer photo-etching using solid phase reaction at fluorination agent-silicon interface.

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A new photo-etching method with N-fluoropyridinium salts is proposed in this study. Si is etched by applying N-fluoropyridinium salts to its surface and exposing the surface to light. The etched surface using liquid N-fluoropyridinium salts is smoother than that using solid N-fluoropyridinium salts. The etching depth increases with exposure time. H-terminated hydrophobic Si is easier to etch than OH-terminated hydrophilic Si. SiF_4 is produced by photo-etching. The number of processes in the new photo-etching method is fewer than that in the lithography and etching. The etching depth increases with light intensity. A ditch with different depths and a spherical surface are formed by exposing to light with different intensities at a time. It is expected to form arbitrary three-dimensional shape in a silicon surface by controlling light intensity distribution.