Study on Shape Mchining of Silicon Surface with Solid Phase Reaction between Solid Fluorination Agent/Silicon Interface.

固体氟化剂/硅界面固相反应硅表面形状加工研究。

• 批准号: 18560104
• 负责人: UCHIKOSHI Junichi
• 金额: $ 2.55万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18560104/
• 关键词: photo-etching; silicon; N-fluoropyridinium salt; fluorination agent; applying; exposure; hydrophobic surface; hydrophilic surface; 形状創成; 固相反応; エッチング; 界面; 近赤外光; 干渉計

Lithography is widely used in the semiconductor industry. In lithography and etching, a pattern is formed on a Si surface by the following processes : applying resist, exposure, developing and etching. N-Fluoropyridinium salt is an electrophilic fluoritation agent. The salt has high reactivity. It is expected that N-fluoropyridinium salts fluorinate Si when the salts receive electrons. In this study, we propose a new photo-etching method to form a pattern on a Si surface by fewer processes : applying N-fluoropyridinium salts and exposure. N-Fluoropyridinium salts used in this experiment were N-fluoro-3-methylpyridinium tetrafluoroborate, N-fluoro-4-methylpyridinium tetrafluoroborate and N-fluoropyridinium triflrate. The N-fluoropyridinium salts were dissolved into the solvent of asetonitril. A p-type Si (100) wafer with a resistivity of 8.5-12 Ω・cm was used. The wafer was treated to prepare an H-terminated hydrophobic surface, or to prepare an OH-terminated hydrophilic surface. The salts were applied to the prepared surface. After applying salts, the Si surface was exposed to UV or visible light from a Xe lamp through a mask. Etching depth was measured using a microscopic phase-shifting interferometer. The Si in exposed area was etched more than the Si in unexposed area. The etching of the Si could be observed by UV or visible light exposure. The Si surface was exposed to visible light with the peak wavelengths of 440, 550 and 620nm using a projector. The Si in the area of the projected pattern was etched. The etching depth increases with the light exposure time. The Si was not uniformly etched with the salts. It is necessary to apply evenly a fluoritation agent for uniform etching. These results suggest that arbitrary shape can be formed on a Si surface by the control of an exposed pattern and exposure time distribution.

光刻技术广泛应用于半导体工业。在光刻和蚀刻中，通过以下过程在硅表面上形成图案：涂上抗蚀剂、曝光、显影和蚀刻。n -氟吡啶盐是一种亲电氟化剂。这种盐有很高的反应活性。预计当n -氟吡啶盐接受电子时，会氟化Si。在这项研究中，我们提出了一种新的光蚀刻方法，通过更少的工艺在Si表面形成图案：应用n -氟吡啶盐和曝光。本实验使用的n -氟吡啶盐为n -氟-3-甲基四氟硼酸吡啶、n -氟-4-甲基四氟硼酸吡啶和n -氟吡啶三氟酸盐。将n -氟吡啶盐溶解在萘乙腈溶剂中。采用电阻率为8.5-12 Ω·cm的p型Si（100）晶圆片。对晶圆片进行处理，制备端h型疏水表面，或端oh型亲水表面。盐被涂在制备好的表面上。在涂上盐后，将硅表面通过掩膜暴露在氙灯的紫外线或可见光下。蚀刻深度采用显微相移干涉仪测量。暴露区硅的蚀刻量大于未暴露区。硅的蚀刻可以通过紫外或可见光曝光来观察。利用投影仪将Si表面暴露在峰值波长为440、550和620nm的可见光下。在投影图案区域的Si被蚀刻。蚀刻深度随曝光时间的增加而增加。硅不均匀地被盐蚀刻。为了使蚀刻均匀，必须均匀地涂上氟化剂。这些结果表明，通过控制曝光模式和曝光时间分布，可以在硅表面形成任意形状。

项目成果

Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy

通过近红外散射形貌和显微镜表征绝缘体上键合硅晶圆中埋入的图案化氧化物

• 发表时间: 2008
• 期刊: Japanese Journal of Applied Physics 47
• 作者: Xing WU;et al.
• 通讯作者: et al.

傾斜角積分法による超精密形状計測法-焦点距離150mmの軸外し放物面測定での測定点座標の決定-

采用倾斜角积分法的超精密形状测量方法 - 焦距 150 mm 的离轴抛物面测量中测量点坐标的确定 -

• 发表时间: 2007
• 作者: 東保男;他
• 通讯作者: 他

Near-Infrared Scattering Topography and Microscopy Combination Method for Bonded Silicon-on-Insulator Wafers with Patterned Buried Oxide

近红外散射形貌和显微镜结合方法研究具有图案化埋氧化物的绝缘体上键合硅晶圆

• 发表时间: 2007
• 作者: Junichi Uchikoshi;et al.
• 通讯作者: et al.

Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulat or Wafers by Near-Infrared Scattering Topography and Microscopy

通过近红外散射形貌和显微镜表征埋在键合绝缘体上硅或晶圆中的图案化氧化物

• 发表时间: 2007
• 作者: Xing Wu;Junichi Uchikoshi;Takaaki Hirokane;Ryuta Yamada;Kenta Arima;Mizuho Morita
• 通讯作者: Mizuho Morita

Characterization of Void in Bonded SOI Wafers by Controlling Coherence Length of Near-Infrared Microscope

通过控制近红外显微镜的相干长度表征键合 SOI 晶圆中的空洞

• 发表时间: 2006
• 期刊: Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials, Yokohama, 2006
• 作者: Noritaka Ajari;Junichi Uchikoshi;Takaaki Hirokane;Kenta Arima;Mizuho Morita
• 通讯作者: Mizuho Morita