Shape formation in silicon surface by transfer photo-etching using chemical reaction at fluorinating agent-silicon interface

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A new photo-etching method with N-fluoropyridinium salts is proposed in this study. Si is etched by applying N-fluoropyridinium salts to its surface and exposing the surface to light. Si is etched by the irradiation of light with an energy higher than the band gap of Si. The N-F bond in the salts is broken by receiving excited electrons and releases an active F species. The F species react with Si to produce SiF4. The SiF4 is released.The etching rate increases with exposure time or light intensity or temperature. A ditch with different depths and a spherical surface and a flat surface are formed by exposing to light with different intensities at a time. It is expected to form arbitrary three-dimensional shape in a silicon surface by controlling light intensity distribution.Absolute flatness of three silicon plane mirrors have been measured by a three-intersection method based on the three-flat method using a near-infrared interferometer.