Shape formation in silicon surface by transfer photo-etching using chemical reaction at fluorinating agent-silicon interface

利用氟化剂-硅界面的化学反应通过转移光刻在硅表面形成形状

• 批准号: 23560123
• 负责人: UCHIKOSHI Junichi
• 金额: $ 3.66万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23560123/
• 关键词: フッ素化剤; Ｎ－フルオロピリジニウム塩; 光エッチング; 光転写; シリコン; 3次元形状; 半導体表面; 形状創成; N-フルオロピリジニウム塩; エッチング; フォトエッチング; 創成加工; 修正加工

A new photo-etching method with N-fluoropyridinium salts is proposed in this study. Si is etched by applying N-fluoropyridinium salts to its surface and exposing the surface to light. Si is etched by the irradiation of light with an energy higher than the band gap of Si. The N-F bond in the salts is broken by receiving excited electrons and releases an active F species. The F species react with Si to produce SiF4. The SiF4 is released.The etching rate increases with exposure time or light intensity or temperature. A ditch with different depths and a spherical surface and a flat surface are formed by exposing to light with different intensities at a time. It is expected to form arbitrary three-dimensional shape in a silicon surface by controlling light intensity distribution.Absolute flatness of three silicon plane mirrors have been measured by a three-intersection method based on the three-flat method using a near-infrared interferometer.

本文提出了一种新的N-氟吡啶盐光刻方法。通过将N-氟吡啶鎓盐施加到其表面并将表面暴露于光来蚀刻Si。通过照射能量高于Si的带隙的光来蚀刻Si。盐中的N-F键通过接收激发电子而断裂，并释放出活性F物质。F物质与Si反应生成SiF 4。随着曝光时间、光照强度和温度的增加，刻蚀速率增大。通过一次曝光不同强度的光，形成不同深度的沟槽和球面、平面。利用近红外干涉仪，在三平面法的基础上，采用三相交法测量了三个硅平面镜的绝对平面度。

项目成果

N-フルオロピリジニウム塩を用いた光エッチングによるシリコンのランダム逆ピラミッドの形成

使用 N-氟吡啶鎓盐通过光刻在硅中形成随机倒金字塔

• 发表时间: 2013
• 作者: 足達健二;永井隆文;平野利典;大谷真輝;川合健太郎;打越純一;森田瑞穂
• 通讯作者: 森田瑞穂

エッチング方法

蚀刻法

• 发表时间: 2012

Characterization of Si etching with N-fluoropyridinium salt

N-氟吡啶鎓盐硅蚀刻的表征

• 发表时间: 2012
• 期刊: Current Applied Physics
• 影响因子: 2.4
• 作者: Kentaro Tsukamoto;Junichi Uchikoshi;Masaki Otani;Toshinori Hirano;Yutaka Ie;Takabumi Nagai;Kenji Adachi;Kentaro Kawai;Kenta Arima;and Mizuho Morita
• 通讯作者: and Mizuho Morita

Metal Particulates on Si Etching with N-Fluoropyridinium Salts

N-氟吡啶盐蚀刻硅中的金属颗粒

• 发表时间: 2011
• 作者: Masaki Otani;Junichi Uchikoshi;Kentaro Tsukamoto;Takabumi Nagai;Kenji Adachi;Kentaro Kawai;Kenta Arima;and Mizuho Morita
• 通讯作者: and Mizuho Morita

先端機器システム領域 研究内容紹介、光エッチングによる3次元形状の創製

先进设备系统领域：研究内容的介绍、通过光蚀刻创建3D形状