Effects of a photonic nanostructure on light emission of silicon
Effects of a photonic nanostructure on light emission of silicon
批准号:
20760198
负责人:
FUJITA Masayuki
金额:
$2.66万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2010
中文摘要
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英文摘要
We have introduced a photonic crystal (PC) into a silicon (Si) slab to manipulate the light emission. Our study demonstrates that the light extraction is improved by a factor of ~50 in a defect-free PC. In addition, introducing a nanocavity into the PC can enhance the emission by up to a factor of ~300 by improving also the objective coupling and the internal quantum efficiencies. We also found that phonon accumulation in the tiny space will be a key for enhanced light emission in addition to the cavity effect for photons. Finally, we propose and demonstrate the application of high-pressure water vapor annealing (HWA) to Si PC nanocavities for surface passivation. We found that HWA boosts light emission due to the reduction of surface recombination beyond simply using the cavity effect.
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活性層貫通型GaInNフォトニック結晶発光ダイオードの電流注入動作
有源层穿透型GaInN光子晶体发光二极管的电流注入操作
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[北川均, 黒川要一, 須藤俊英, 冨士田誠之, 浅野卓, 野田進]
通讯作者:
野田進
Reduction of surface recombination and enhancement of light emission in silicon photonic crystals treated by high-pressure water vapor annealing.
高压水蒸气退火处理的硅光子晶体中表面复合的减少和发光的增强。
DOI:
--
发表时间:
2010
期刊:
Appl.Phys.Lett.
影响因子:
--
作者:
[M.Fujita, B.Gelloz, N.Koshida, S.Nods]
通讯作者:
S.Nods
DOI:
10.1109/jstqe.2008.918941
发表时间:
2008-07-01
期刊:
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
影响因子:
4.9
作者:
[Fujita, Masayuki, Tanaka, Yoshinori, Noda, Susumu]
通讯作者:
Noda, Susumu
Green GaInN photonic-crystal light-emitting-diodes
绿色 GaInN 光子晶体发光二极管
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[M.Fujita, H.Kitagawa, T.Suto, Y.Kurokawa, T.Asano, S.Noda]
通讯作者:
S.Noda
活性層貫通型GaInNフォトニック結晶発光ダイオードの時間分解電流注入発光
穿透有源层GaInN光子晶体发光二极管的时间分辨电流注入光发射
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[北川均, 須藤俊英, 小暮竜矢, 冨士田誠之, 浅野卓, 野田進]
通讯作者:
野田進
共 35 条
Photonic crystal terahertz-wave absorbers
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批准号:24656208
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
-
财政年份:2012
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负责人:FUJITA Masayuki
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依托单位:
Study on photonic-crystal effects on photovoltaic materials towards efficient photovoltaic devices
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批准号:23686050
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项目类别:Grant-in-Aid for Young Scientists (A)
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资助金额:$17.14万
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财政年份:2011
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负责人:FUJITA Masayuki
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依托单位:
Investigations of Phase Transition and Ultra-fast Carrier Excitation in Semiconductor by Ultra-short Coherent Light Sources
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批准号:21560762
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.91万
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财政年份:2009
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负责人:FUJITA Masayuki
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依托单位:
Robust Cooperative Algorithm Design for Robotic Sensor Networks and Experimental Verification
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批准号:21560457
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.0万
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财政年份:2009
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负责人:FUJITA Masayuki
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依托单位:
Study on Dynamic Cooperative Visual Feedback Sensor Network Design via Distributed Model Predictive Control
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批准号:19560437
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.83万
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财政年份:2007
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负责人:FUJITA Masayuki
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依托单位:
On the Design of Observer-based Dynamic Visual Servo Systems via Nonlinear H_∞ Model Predictive Control
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批准号:14550442
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.28万
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财政年份:2002
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负责人:FUJITA Masayuki
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依托单位:
A Study on Advanced Visual Servo Systems Design via Nonlinear Model Predictive Control
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批准号:12650440
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.15万
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财政年份:2000
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负责人:FUJITA Masayuki
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依托单位:
A Study on Robust H∞ Control of Visual Servo Systems Design
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批准号:10650427
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.15万
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财政年份:1998
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负责人:FUJITA Masayuki
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依托单位:
海外基金