Investigations of Phase Transition and Ultra-fast Carrier Excitation in Semiconductor by Ultra-short Coherent Light Sources

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Femtosecond laser irradiation near ablation threshold generates periodic structures, which give us clues to understand interactions between materials and coherent light. In these studies, SiC and Al-Si alloy are used as samples. We investigated changes of periodic surface structure, which were influenced by the phase transition of semiconductors and changes of the ablation thresholds and effective optical penetration depths accompanied with carrier excitation.