Spin injection into Si using Co-based Heusler alloys

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Highly spin-polarized ferromagnetic materials are suitable for a spin source to realize an efficient spin-injection into semiconductor Si. In this study I focused on a Co_2FeAl_<0.5>Si_<0.5> (CFAS) Heusler alloy and established fabrication techniques of high-quality CFAS thin films. As a result, very high spin-polarization of the CFAS films was confirmed through analyses of transport properties of multilayers with the CFAS. In addition, formation of MgAl_2O_4 epitaxial thin films on the CFAS was achieved. The MgAl_2O_4 can be used as a tunnel barrier for future spin-injection devices since almost perfect lattice matching between MgAl_2O_4 and CFAS is achieved.