Development of a new magnetic tunnel junction structure using a monocrystalline spinel-based tunnel barrier

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Tunnel magnetoresistance (TMR) devices with a monocrystalline MgAl2O4 barrier were successfully developed. The lattice matched heterostructure without any defects at the barrier interfaces was obtained, and TMR enhancement due to a spin-dependent coherent tunneling effect was demonstrated in the structure. In addition, it was found that cation-site disordering into the MgAl2O4 structure significantly increases the TMR. In fact, a giant TMR over 300% at room temperature was achieved by introducing the disordering into the barrier. These results demonstrate the effectiveness of MgAl2O4 as a spintronics material.