Evaluation of Microscopic Properties and Elucidation of Charge-Trapping Mechanism of Organic Transistors with Electron Spin Resonance

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We applied an electron spin resonance (ESR) method to field-effect transistors (FET) with organic crystals, conducting polymers, etc. to perform microscopic characterization of organic molecules in crystal grains or at device interfaces. The ESR method is high sensitive and capable of characterizing materials at molecular level. Using this method, we performed analyses of dynamics of charge carriers and charge trapping states at device interfaces. Moreover, we clarified formation of magnetic interactions and nonmagnetic states of charge carriers under high density charges.