Large grain-sized FeSi_2 films by micro-channel epitaxy for infrared detectors

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We have epitaxially grown undoped β-FeSi_2 films on Si (111) substrates via atomic-hydrogen-assisted molecular-beam epitaxy. They showed n-type conduction and had a residual electron density that was more than two orders of magnitude lower than the hole density of films grown without atomic hydrogen (of the order of 10^<16> cm^<-3> at room temperature). We have also achieved the formation of β-FeSi_2 epitaxial films with grain-sizes exceeding 1 μm on SOI substrates by metalorganic vapor phase epitaxy using β-FeSi_2 island-like templates formed by reactive deposition epitaxy.