Fabrication of Si-based room temperature infrared light-emitting diodes using β-FeSi_2

β-FeSi_2硅基室温红外发光二极管的制备

• 批准号: 12555084
• 负责人: SUEMASU Takashi
• 金额: $ 3.26万
• 依托单位: University of Tsukuba
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555084/
• 关键词: Iron disilicide; photoluminescence; light-emitting diode; electroluminescence; 透過型電子顕微鏡; 電流注入

The purpose of this work is to fabricate infrared light-emitting diodes (LEDs) using semiconducting β-FeSi_2 which operate at room temperature (RT). In the term of this project, we have realized RT 1.6μm electroluminescence (EL) from p-Si/β-FeSi_2 particles/n-Si LEDs for the first time. It was found that the luminescence from β-FeSi_2 particles embedded in Si was very sensitive to the following growth conditions.1. The photoluminescence (PL) intensity of β-FeSi_2 strongly depends on MBE-Si growth temperature for embedding β-FeSi_2 in Si. When the Si overlayer was grown at lower temperatures of 400-500℃, the PL was intense. In contrast, the PL was very weak and was difficult to detect when it was grown at higher temperatures of 600-750℃. It was found that about 9% tensile strain was introduced into the particles in the [100] direction of β-FeSi_2, making the β-FeSi_2 a direct band gap semiconductor.2. PL was found to be sensitive to the size of β-FeSi_2 particles embedded in Si matrix. The PL intensity increased with the size of β-FeSi_2, but the intensity of 1.2-1.4μm broad PL also increased for samples with β-FeSi_2 bigger than 200nm. Transmission electron microscopy observation revealed that dislocations were introduced around the particles for those samples.3. PL was found to improve significantly by optimizing p-Si growth temperature and its boron concentration. Dislocation and point defects were found to be generated by oxygen incorporated in to the heavily boron-doped Si layer during the 14h of thermal annealing at 900℃, and are suggested to be responsible for the quenching of the PL.

本工作的目的是利用半导体β-FeSi_2制备室温下工作的红外发光二极管（LED）。在本项目期间，我们首次实现了p-Si/β-FeSi_2粒子/n-Si LED的RT 1.6μm电致发光（EL）。发现镶嵌在Si中的β-FeSi_2颗粒的发光对以下生长条件非常敏感.β-FeSi_2的光致发光（PL）强度强烈依赖于嵌入Si的MBE Si生长温度。当Si覆盖层生长温度较低（400-500℃）时，PL较强。而在600-750℃的高温下生长时，荧光强度很弱，很难检测到。研究发现，在β-FeSi_2的[100]方向上引入了约9%的拉伸应变，使β-FeSi_2成为直接带隙禁带宽度减小器.发现PL对镶嵌在Si基体中的β-FeSi_2颗粒的尺寸很敏感。荧光强度随β-FeSi_2粒径的增大而增大，但当β-FeSi_2粒径大于200 nm时，1.2-1.4μm宽荧光强度也随之增大。透射电子显微镜观察发现，在这些样品的颗粒周围引入了位错.发现通过优化p-Si生长温度和硼浓度，PL显着改善。在900℃热退火14 h后，发现掺硼Si层中的氧在退火过程中产生位错和点缺陷，并认为这些缺陷是导致PL猝灭的原因。

项目成果

Influence of boro-doped Si cap layer on the photoluminescence of β-FeSi_2 particles embedded in Si matrix

硼掺杂Si盖层对Si基体中β-FeSi_2颗粒光致发光的影响

• 发表时间: 2003
• 期刊: Journal of Applied Physics Vol.94, No.3
• 作者: C.Li

Si結晶中に埋込まれたFeSi_2のTEM観察

Si晶体中嵌入FeSi_2的TEM观察

• 发表时间: 2001
• 期刊: まてりあ 40巻、12号
• 作者: C.Li;C.Li;K.Takakura;T.Nakamura;K.Takakura;末益崇;K.Takakura;T.Nakamura;K.Takakura;T.Suemasu;知京豊裕
• 通讯作者: 知京豊裕

Investigation of the energy band structure of orthorhombic BaSi2 by optical and electrical measurements and theoretical calculations

• DOI: 10.1063/1.1498865
• 发表时间: 2002-07
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Tomoyuki Nakamura;T. Suemasu;K. Takakura;F. Hasegawa;A. Wakahara;M. Imai

K.Takarabe: "Optical porperties of β-FeSi_2 under pressure"Physical Review B. Vol.65. 165125 (2002)

K.Takarabe：“β-FeSi_2 在压力下的光学特性”Physical Review B. Vol.65 (2002)。

K.Takarabe: "Optical absorption spectra of β-FeSi_2 under pressure"physics status solidi(b). Vol.223. 259-263 (2001)

K.Takarabe：“压力下 β-FeSi_2 的光学吸收光谱”物理学状态 Vol.223（2001）。