Fabrication of Si-based room temperature infrared light-emitting diodes using β-FeSi_2
β-FeSi_2硅基室温红外发光二极管的制备
基本信息
- 批准号:12555084
- 负责人:
- 金额:$ 3.26万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2000
- 资助国家:日本
- 起止时间:2000 至 2002
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The purpose of this work is to fabricate infrared light-emitting diodes (LEDs) using semiconducting β-FeSi_2 which operate at room temperature (RT). In the term of this project, we have realized RT 1.6μm electroluminescence (EL) from p-Si/β-FeSi_2 particles/n-Si LEDs for the first time. It was found that the luminescence from β-FeSi_2 particles embedded in Si was very sensitive to the following growth conditions.1. The photoluminescence (PL) intensity of β-FeSi_2 strongly depends on MBE-Si growth temperature for embedding β-FeSi_2 in Si. When the Si overlayer was grown at lower temperatures of 400-500℃, the PL was intense. In contrast, the PL was very weak and was difficult to detect when it was grown at higher temperatures of 600-750℃. It was found that about 9% tensile strain was introduced into the particles in the [100] direction of β-FeSi_2, making the β-FeSi_2 a direct band gap semiconductor.2. PL was found to be sensitive to the size of β-FeSi_2 particles embedded in Si matrix. The PL intensity increased with the size of β-FeSi_2, but the intensity of 1.2-1.4μm broad PL also increased for samples with β-FeSi_2 bigger than 200nm. Transmission electron microscopy observation revealed that dislocations were introduced around the particles for those samples.3. PL was found to improve significantly by optimizing p-Si growth temperature and its boron concentration. Dislocation and point defects were found to be generated by oxygen incorporated in to the heavily boron-doped Si layer during the 14h of thermal annealing at 900℃, and are suggested to be responsible for the quenching of the PL.
本工作的目的是利用半导体β-FeSi_2制备室温下工作的红外发光二极管(LED)。在本项目期间,我们首次实现了p-Si/β-FeSi_2粒子/n-Si LED的RT 1.6μm电致发光(EL)。发现镶嵌在Si中的β-FeSi_2颗粒的发光对以下生长条件非常敏感.β-FeSi_2的光致发光(PL)强度强烈依赖于嵌入Si的MBE Si生长温度。当Si覆盖层生长温度较低(400-500℃)时,PL较强。而在600-750℃的高温下生长时,荧光强度很弱,很难检测到。研究发现,在β-FeSi_2的[100]方向上引入了约9%的拉伸应变,使β-FeSi_2成为直接带隙禁带宽度减小器.发现PL对镶嵌在Si基体中的β-FeSi_2颗粒的尺寸很敏感。荧光强度随β-FeSi_2粒径的增大而增大,但当β-FeSi_2粒径大于200 nm时,1.2-1.4μm宽荧光强度也随之增大。透射电子显微镜观察发现,在这些样品的颗粒周围引入了位错.发现通过优化p-Si生长温度和硼浓度,PL显着改善。在900℃热退火14 h后,发现掺硼Si层中的氧在退火过程中产生位错和点缺陷,并认为这些缺陷是导致PL猝灭的原因。
项目成果
期刊论文数量(88)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Influence of boro-doped Si cap layer on the photoluminescence of β-FeSi_2 particles embedded in Si matrix
硼掺杂Si盖层对Si基体中β-FeSi_2颗粒光致发光的影响
- DOI:
- 发表时间:2003
- 期刊:
- 影响因子:0
- 作者:C.Li
- 通讯作者:C.Li
Si結晶中に埋込まれたFeSi_2のTEM観察
Si晶体中嵌入FeSi_2的TEM观察
- DOI:
- 发表时间:2001
- 期刊:
- 影响因子:0
- 作者:C.Li;C.Li;K.Takakura;T.Nakamura;K.Takakura;末益崇;K.Takakura;T.Nakamura;K.Takakura;T.Suemasu;知京豊裕
- 通讯作者:知京豊裕
Investigation of the energy band structure of orthorhombic BaSi2 by optical and electrical measurements and theoretical calculations
- DOI:10.1063/1.1498865
- 发表时间:2002-07
- 期刊:
- 影响因子:4
- 作者:Tomoyuki Nakamura;T. Suemasu;K. Takakura;F. Hasegawa;A. Wakahara;M. Imai
- 通讯作者:Tomoyuki Nakamura;T. Suemasu;K. Takakura;F. Hasegawa;A. Wakahara;M. Imai
K.Takarabe: "Optical porperties of β-FeSi_2 under pressure"Physical Review B. Vol.65. 165125 (2002)
K.Takarabe:“β-FeSi_2 在压力下的光学特性”Physical Review B. Vol.65 (2002)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
K.Takarabe: "Optical absorption spectra of β-FeSi_2 under pressure"physics status solidi(b). Vol.223. 259-263 (2001)
K.Takarabe:“压力下 β-FeSi_2 的光学吸收光谱”物理学状态 Vol.223(2001)。
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- 影响因子:0
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SUEMASU Takashi其他文献
Physical analysis of remained oxidation byproducts as the origins of lattice distortion at the surface of 4H-SiC by Fourier-transform infrared spectroscopy
通过傅里叶变换红外光谱对 4H-SiC 表面晶格畸变的残留氧化副产物进行物理分析
- DOI:
10.35848/1347-4065/ab7fe9 - 发表时间:
2020 - 期刊:
- 影响因子:0
- 作者:
Aonuki Sho;Yamashita Yudai;TOKO Kaoru;SUEMASU Takashi;Adhi Dwi Hatmanto and Koji Kita - 通讯作者:
Adhi Dwi Hatmanto and Koji Kita
タイマー蛍光たんぱく質搭載HIVのための多階層数理モデル
定时器荧光蛋白负载HIV的多级数学模型
- DOI:
- 发表时间:
2020 - 期刊:
- 影响因子:0
- 作者:
Sugiyama Shu;Yamashita Yudai;TOKO Kaoru;SUEMASU Takashi;北川耕咲 - 通讯作者:
北川耕咲
Fabrication of As-doped n-type BaSi<sub>2</sub> epitaxial films grown by molecular beam epitaxy
分子束外延生长As掺杂n型BaSi<sub>2</sub>外延薄膜的制备
- DOI:
10.7567/1347-4065/ab5b7a - 发表时间:
2020 - 期刊:
- 影响因子:1.5
- 作者:
Aonuki Sho;Yamashita Yudai;TOKO Kaoru;SUEMASU Takashi - 通讯作者:
SUEMASU Takashi
Influence of Ba-to-Si deposition rate ratios on the electrical and optical properties of B-doped BaSi<sub>2</sub> epitaxial films
Ba/Si沉积速率比对B掺杂BaSi<sub>2</sub>外延薄膜电学和光学性能的影响
- DOI:
10.7567/1347-4065/ab65ae - 发表时间:
2020 - 期刊:
- 影响因子:1.5
- 作者:
Sugiyama Shu;Yamashita Yudai;TOKO Kaoru;SUEMASU Takashi - 通讯作者:
SUEMASU Takashi
SUEMASU Takashi的其他文献
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{{ truncateString('SUEMASU Takashi', 18)}}的其他基金
Exploreing the Si-based wide bandgap materials for crystalline Si tandem solar cells
探索用于晶体硅叠层太阳能电池的硅基宽带隙材料
- 批准号:
15H02237 - 财政年份:2015
- 资助金额:
$ 3.26万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Large grain-sized FeSi_2 films by micro-channel epitaxy for infrared detectors
用于红外探测器的微通道外延大晶粒FeSi_2薄膜
- 批准号:
21360002 - 财政年份:2009
- 资助金额:
$ 3.26万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
High-efficiency solar cells utilizing bandgap expansion and conductivity control in semiconducting silicides
利用半导体硅化物中的带隙扩展和电导率控制的高效太阳能电池
- 批准号:
18360005 - 财政年份:2006
- 资助金额:
$ 3.26万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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