Improvement of organic device performance via physical and chemical control of metal - organic semiconductor interfaces

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We explored a novel method to improve the performance of organic field effect transistors (FETs) by controlling the interface between the metal electrode and the organic semiconductor. Thin film growth of sexithiophene from the Au electrode induced the single crystalline growth in the narrow channel, improving the FET mobility. We established the method to form the graphene-based electrodes on the gate dielectric in a solution process and proved that the solution processed pentacene film on it worked as a high mobility FET.