Study of flashmemory using organic and molecular materials

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A gate stack structure with an organic-polymer tunneling gate insulator on a C_60-containing organic-polymer layer was developed for use as nonvolatile flash memory. Examination of the memory characteristics revealed substantial flatband voltage shifts for carrier injection into C_60 molecules. A long retention time was obtained for electron injection. Charge redistribution phenomena were observed in the electron retention characteristics immediately after the bias voltage application was terminated.