Study of flashmemory using organic and molecular materials

使用有机分子材料的闪存研究

• 批准号: 21360012
• 负责人: NAKAJIMA Anri
• 金额: $ 12.23万
• 依托单位: Hiroshima University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21360012/
• 关键词: 有機; 分子エレクトロニクス; フラッシュメモリ; 有機分子; フラーレン; シリコン

A gate stack structure with an organic-polymer tunneling gate insulator on a C_60-containing organic-polymer layer was developed for use as nonvolatile flash memory. Examination of the memory characteristics revealed substantial flatband voltage shifts for carrier injection into C_60 molecules. A long retention time was obtained for electron injection. Charge redistribution phenomena were observed in the electron retention characteristics immediately after the bias voltage application was terminated.

开发了一种在含C_60的有机聚合物层上具有有机聚合物隧道栅绝缘体的栅堆叠结构，用于非易失性闪存。对存储特性的研究揭示了载流子注入C_60分子时的平带电压漂移。电子注入的保留时间较长。在偏压施加终止后立即在电子保持特性中观察到电荷再分布现象。

项目成果

Charge redistribution in a charge storage layer containing C60 molecules and organic polymers for long electron retention

• DOI: 10.1063/1.4767132
• 发表时间: 2012-11-19
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Nakajima, Anri;Uchino, Masatoshi
• 通讯作者: Uchino, Masatoshi