Design of New Structure and New Material Devices by a Quantum Transport Simulator in Ultimately Scaled VLSIs

点击翻译按钮获取中文摘要

：In recent years, advances in LSI technology based on the continuous scaling of metal-oxide-semiconductor (MOS) field-effect transistors (FETs) has enabled improvements in the switching speed，density，functionality, and cost of microprocessors. However，such downsizing now becomes a cause of reducing the device performance due to increasing leakage current and short channel effects. In this project，we have investigated, making use of a newly developed quantum transport simulator, the effectiveness of using the InAs/Si hetero-junction nanowire (NW) as a solution to the above problem，and influence of strain caused byhetero-junction on tunneling characteristics through hetero interface. As a result, the simulator enabled us to find that the InAs p-i-n structure shows most favorable characteristics in both the on-current and the sub-threshold slope and the p-Si-i-Si-n-InAs structure is the runner-up.