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Basic Research of a Spin Transistor Based on the Quantum Transport in an Inhomogeneous Magnetic Field

基于非均匀磁场量子输运的自旋晶体管基础研究

基本信息

批准号：
07650397
负责人：
OGAWA Matsuto
金额：
$ 1.41万
依托单位：
Kobe University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1996
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650397/
关键词：
Spin Controll in Nano-Structures Diluted Magnetic Semiconductors Band Structures Stark Effect Liouville Equation Band Mixing Effect Wigner Distribution Function スピントランジスタシュテルン・ゲルラッハ効果磁気光吸収効果

项目摘要

This project has been aimint at the analysis of the band structures and the quantum carrier transport in both diluted magnetic semiconductors and nano structures composed of compound semiconductors. We have obtained the following results so far :・Analysis of the band structures of semiconductor nano structures such as quantum wells and quantum wires taking the spin-orbit interaction into accountFrom this analysis, we have concluded the conventional parabolic band approximation is no longer appropriate to predict and design optical properties of quantum nano structures. We have also found an external electric field significantly affects the band structures of such nano structures (Stark effect) which can be precisely simulated by taking into account both the multi-band effective mass theory and the the spin-orbit coupling.・Analysis of the quantum transport of carriers in nano structuresWe describe a method for calculating quantum transport of carriers in nano structures. In this method, we use the lattice-Wigner Weyl formalism of the field operators to deduce the quantum mechanical distribution function (Wigner-Weyl function) in which multiband-effective-mass theory is taken into account. The physical quantities such as carrier densities and particle flow densities can be more readily computed from the distribution function than conventional methods. The formulation is applied to analyze quantum hole transport in a double barrier resonant tunneling diode. As a result, the current-voltage characteristics show considerable band-mixing nature of the light hole and the heavy hole. This theory may be applicable to analyze quantum transport of carriers in quantum optical devices such as quantum-well lasers and electro-optical modulators where the band-mixing effect plays an important role.

本项目主要研究稀磁半导体和化合物半导体纳米结构的能带结构和量子载流子输运。·考虑自旋轨道相互作用对量子威尔斯和量子线等半导体纳米结构的能带结构进行了分析由此我们得出结论：传统的抛物线能带近似不再适合于预测和设计量子纳米结构的光学性质。我们还发现，外电场显着影响这种纳米结构的能带结构（斯塔克效应），这可以通过考虑多带有效质量理论和自旋轨道耦合来精确模拟。纳米结构中载流子的量子输运分析本文描述了一种计算纳米结构中载流子量子输运的方法。在该方法中，我们利用场算符的格点-Wigner-Weyl形式推导出了考虑多带有效质量理论的量子力学分布函数（Wigner-Weyl函数）。与传统方法相比，可以更容易地从分布函数计算诸如载流子密度和粒子流密度的物理量。应用该公式分析了双势垒共振隧穿二极管中的量子空穴输运。其结果是，电流-电压特性显示出相当大的轻空穴和重空穴的带混合性质。这一理论可用于分析量子阱激光器和电光调制器等量子光学器件中载流子的量子输运，其中能带混合效应起着重要作用。