All-solution-processed fabrication of organic transistors on paper
All-solution-processed fabrication of organic transistors on paper
批准号:
21750197
负责人:
MINARI Takeo
金额:
$3.16万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2010
中文摘要
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英文摘要
We acheved area-selective crystal growth of organic semiconductors by pattening of surface functionality. By use of this technique, we developed an all-solution-processed fabrication method for organic field-effecgt transistor arrays. This bottom-up method can be carried out under ambient atmosphere without use of vacuum apparatuses. The low processing temperature allows use of plastic as a substrate so that fabrication of flexible electronics devices becomes possible by facile printing technologies.
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Ambipolar-transporting coaxial nanotubes with a tailored molecular grapheme-fullerene heterojunction
具有定制分子石墨烯-富勒烯异质结的双极性传输同轴纳米管
DOI:
--
发表时间:
2009
期刊:
Proceedings of the National Academy of Sciences of the United States America 106
影响因子:
--
作者:
[Y.Yamamoto, W.Jin, T.Fukushima, T.Minari, K.Tsukagoshi, A.Saeki, S.Seki, S.Tagawa, T.Aida]
通讯作者:
T.Aida
Selective molecular assembly for bottom-up fabrication of organic thin-film transistors(Self-Organized Organic Semiconductors : From Materials to Device Applications, Chapter 9)
自下而上制造有机薄膜晶体管的选择性分子组装(自组织有机半导体:从材料到器件应用,第 9 章)
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[T.Minari, M.Kano, K.Tsukagoshi]
通讯作者:
K.Tsukagoshi
DOI:
10.1063/1.3115826
发表时间:
2009-04-06
期刊:
APPLIED PHYSICS LETTERS
影响因子:
4
作者:
[Kano, Masataka, Minari, Takeo, Tsukagoshi, Kazuhito]
通讯作者:
Tsukagoshi, Kazuhito
DOI:
10.1063/1.3467057
发表时间:
2010-07
期刊:
Applied Physics Letters
影响因子:
4
作者:
[Yong Xu;T. Minari;K. Tsukagoshi;R. Gwoziecki;R. Coppard;F. Balestra;J. Chroboczek;G. Ghibaudo]
通讯作者:
Yong Xu;T. Minari;K. Tsukagoshi;R. Gwoziecki;R. Coppard;F. Balestra;J. Chroboczek;G. Ghibaudo
DOI:
10.1063/1.3432716
发表时间:
2010-06
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[Yong Xu;T. Minari;K. Tsukagoshi;J. Chroboczek;G. Ghibaudo]
通讯作者:
Yong Xu;T. Minari;K. Tsukagoshi;J. Chroboczek;G. Ghibaudo
共 33 条
Submicron-scale selective metallization process for 3D integration technology
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批准号:17H02769
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.98万
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财政年份:2017
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负责人:MINARI Takeo
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依托单位: