Development of high-temperature and high-sensitivity diamond MEMS strain sensor

在这个项目中，我们提出了一种新的器件概念，如金属-压电-绝缘体-半导体场效应晶体管(MPIS)-场效应管(MPIS)-FET用于压力传感器。在2009-2010年间，我们开发了Al_2O_3和CaF_2等多种绝缘体，用于在金刚石上整合PZT(PZT)上的铅(Zr_&lt；0.52&gt；，Ti_&lt；0.48&gt；)O_3。研究了绝缘体对PZT薄膜的结晶取向、剩余极化的影响。另一方面，我们发展了单晶金刚石悬浮结构的制备方法。最后，我们对MPIS电容和FET压力传感器结构的电学性能进行了评估。

In this Project, we proposed a novel device concept such as metal-piezoelectric-insulator-semiconductor field-effect transistor (MPIS)-FET for pressure sensors by using p-type diamond. During the period from 2009-2010, we developed various insulators such as Al_2O_3 and CaF_2 for the integration of Pb(Zr_<0.52>,Ti_<0.48>)O_3 (PZT) on diamond. We studied the effect of insulator on the crystallographic orientation, the remanent polarization of the PZT films. On the other hand, we developed the method for the fabrication of suspended structures of single crystal diamond. Finally, we evaluated the electric properties of the MPIS capacitor and the FET pressure sensor structures.