Research on nano wire phase-change memory

本文采用两种方法制备了纳米线相变存储器：(1)采用ZEP-520A正阻剂制备EBL，然后进行相变材料沉积和提升工艺；(2)采用硅氧烷（HSQ）负阻剂制备EBL，然后在相变材料沉积后进行反应离子刻蚀（RIE）。我们还演示了通过嵌段共聚物光刻和直接两步蚀刻制备的锥形TiN/Ge2Sb2Te5(GST)/TiN纳米阵列（天线阵列密度：207gb inch2）的制造和相变存储性能。这项工作为相变材料的低功耗和超高密度存储迈出了重要的一步

In this work, we fabricated the nanowire phase-change memories with two methods :(1)EBL using the positive resist ZEP-520A followed by phase-change material deposition and lift-off processes,(2)EBL using the negative resist hydrogen silsesquioxane(HSQ)followed by reactive ion etching(RIE)after phase-change material deposition. We also demonstrated the fabrication and phase change memory performance of a conical TiN/Ge2Sb2Te5(GST)/TiN nanoarray(aerial array density : 207 Gbit inch2)prepared via block copolymer lithography and straightforward two-step etching. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials