Research on nano wire phase-change memory

纳米线相变存储器的研究

• 批准号: 21710135
• 负责人: YIN You
• 金额: $ 2.91万
• 依托单位: Gunma University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21710135/
• 关键词: 相変化メモリ; 微細化; 低消費電力; 不揮発メモリ; ナノ; 縮小化; 電子線描画; ナノワイヤ

In this work, we fabricated the nanowire phase-change memories with two methods :(1)EBL using the positive resist ZEP-520A followed by phase-change material deposition and lift-off processes,(2)EBL using the negative resist hydrogen silsesquioxane(HSQ)followed by reactive ion etching(RIE)after phase-change material deposition. We also demonstrated the fabrication and phase change memory performance of a conical TiN/Ge2Sb2Te5(GST)/TiN nanoarray(aerial array density : 207 Gbit inch2)prepared via block copolymer lithography and straightforward two-step etching. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials

本文采用两种方法制备了纳米线相变存储器：(1)采用ZEP-520A正阻剂制备EBL，然后进行相变材料沉积和提升工艺；(2)采用硅氧烷（HSQ）负阻剂制备EBL，然后在相变材料沉积后进行反应离子刻蚀（RIE）。我们还演示了通过嵌段共聚物光刻和直接两步蚀刻制备的锥形TiN/Ge2Sb2Te5(GST)/TiN纳米阵列（天线阵列密度：207gb inch2）的制造和相变存储性能。这项工作为相变材料的低功耗和超高密度存储迈出了重要的一步

项目成果

Multilevel Storage in N-Doped Sb2Te3-Based Lateral Phase Change Memory with an Additional Top TiN Layer

• DOI: 10.1143/jjap.48.04c063
• 发表时间: 2009-04
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: Y. Yin;K. Ota;T. Noguchi;H. Ohno;H. Sone;S. Hosaka

Influence of phase-change materials and additional layer on performance of lateral phase-change memories

相变材料和附加层对横向相变存储器性能的影响

• 发表时间: 2012
• 期刊: Key Engineering Materials
• 作者: Y. Yin;SHosaka
• 通讯作者: SHosaka

Large-Area

大面积

• 发表时间: 2012
• 期刊: Scalable Fabrication of Conical TiN/GST/TiN Nanoarray for Low-Power Phase Change Memory Journal of Materials Chemistry
• 作者: J. Yoon;H. Jeong;S. Hong;Y. Yin;H. Moon;S. Jeong;J. Han;Y. Kim;Y. Kim;Heon Lee;S Kim;J. Lee
• 通讯作者: J. Lee

Large resistance ratio for high reliability of multi-Level storage in phase-change memory

大电阻比，实现相变存储器多级存储的高可靠性

• 发表时间: 2011
• 期刊: Key Engineering Materials
• 作者: Y. Yin;T. Noguchi;H. Ohno;S. Hosaka
• 通讯作者: S. Hosaka

Random access multi-levels phase changing using pulse modulation

使用脉冲调制的随机访问多级相位改变

• 发表时间: 2011
• 作者: S.Hosaka;T.Noguchi;S.Kobayashi;R.I.B. Alip;Y.Yin
• 通讯作者: Y.Yin