Fabrication of photovoltaic cells using amorphous carbon films

本文介绍了掺杂非晶碳膜的制备及其在光伏电池中的应用。采用脉冲磁控溅射法制备了存款非晶碳薄膜。使用氮、锑和硼作为掺杂剂，因为氮和锑是15族元素，而硼是13族元素。采用退火工艺降低非晶碳膜的缺陷密度。沉积的薄膜在Ar和H2等离子体气氛下退火。在900 [℃]的H2等离子体气氛中，锑浓度为1.0 [mol%]的退火非晶碳膜的带隙为2.63 [eV]，悬挂键密度低至3.0×10^16 [cm-3]。该值与非晶硅膜相同。最后，制备了由非晶碳组成的光伏电池。结果表明，该电池产生的电压为20~ 49.0mV，电流强度为0.01 μ A。

This report describes fabrication of doped amorphous carbon films and its application to photovoltaic cells. Pulse magnetron sputtering method was used to deposit amorphous carbon films. Nitrogen, antimony and boron were used as the dopants, because nitrogen and antimony are 15-group elements, and boron is 13-group element. Annealing process was utilized to reduce defect density of amorphous carbon films. Deposited films were annealed under Ar and H2 plasma atmosphere. Annealed amorphous carbon films with antimony of 1.0 [mol%] under H2 plasma atmosphere at 900 [℃] showed band gap of 2.63 [eV] and dangling bond density of as low as 3.0×10^16 [cm-3]. This value is as same as amorphous silicon films. Finally, photovoltaic cell consisting of amorphous carbon was fabricated. It was found that the cell generates Voc of 20～49.0 mV，and Isc of0.01uA.