Crystal orientation dependence of solution growth in InGaSb and InGaAs

InGaSb 和 InGaAs 溶液生长的晶体取向依赖性

• 批准号: 22360316
• 负责人: INATOMI Yuko
• 金额: $ 11.81万
• 依托单位: Japan Aerospace Exploration Agency
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22360316/
• 关键词: 結晶工学; 結晶成長; 応用光学; 量子光工学; 超精密計測; 電子・電気材料; 応用光学・量子光工学

InxGa1-xSb and InxGa1-xAs crystals were grown by a temperature gradient method. The morphological change of the growth interfaces, the growth rates, and the compositional distributions were measured by an in-situ observation method and a heat pulse method. Since an applied static magnetic field of 5.5 Tesla suppressed buoyancy convection in InGaSb melt, the indium composition of the grown InxGa1-xSb crystal was almost constant within fluctuation of 0.5 at%. In addition, it was found that growth rate and composition in the grown crystal showed an obvious crystal orientation dependence of InxGa1-xSb bulk crystal growth.

用温度梯度法生长了InxGa_（1-x）Sb和InxGa_（1-x）As晶体。通过原位观察法和热脉冲法测量了生长界面的形态变化、生长速率和成分分布。由于施加5.5特斯拉的静磁场抑制了InGaSb熔体中的浮力对流，所以生长的InxGa 1-xSb晶体的铟组成在0.5at%的波动内几乎恒定。此外，它被发现的生长速率和生长的晶体中的成分表现出明显的晶体取向依赖性的InxGa 1-xSb块体晶体生长。

项目成果

Effect of solute transport on dissolution of Si into Ge melt and growth of SiGe

溶质传输对 Si 溶解到 Ge 熔体和 SiGe 生长的影响

• 发表时间: 2013
• 作者: M.Omprakash;M.Arivanandhan;R.A.Kumar;H.Morii;T.AokiI;T.Koyama;Y.Momose;H.Ikeda; H.Tatsuoka;Y.Okano;T.Ozawa;Y. Inatomi;S.M. Babu;Y. Hayakawa
• 通讯作者: Y. Hayakawa

Growth of homogeneous polycrystalline Sil-xGex and Mg2Si1-xGex for thermoelectric application

用于热电应用的均质多晶 Sil-xGex 和 Mg2Si1-xGex 的生长

• 发表时间: 2011
• 期刊: Thin Solid Films
• 影响因子: 2.1
• 作者: 橋本吉晃,大田昌樹,佐藤善之,猪股宏;M.Arivanandhan;大津 雅亮;Y.Hayakawa
• 通讯作者: Y.Hayakawa

Alloy Semiconductor Crystal Growth under Microgravity

微重力下合金半导体晶体生长

• DOI: 10.1063/1.3530565
• 发表时间: 2010
• 期刊: AIP conference proceedings
• 作者: Y. Hayakawa;M. Arivanandhan;G. Rajesh;A. Tanaka;T. Ozawa;Y. Okano;K. Sankaranarayanan and Y. Inatomi
• 通讯作者: K. Sankaranarayanan and Y. Inatomi

Current Status of Crystal Growth Experiment of InGaSb Alloy Semiconductor in ISS

国际空间站InGaSb合金半导体晶体生长实验现状

• 发表时间: 2012
• 作者: Yuko Inatomi;Kaoruho Sakata;Yasuhiro Hayakawa;Takehiko Ishikawa;Mukannan Arivanandhan;Govindasamy Rajesh;Tadanobu Koyama;Yoshimi Momose;Krishnasamy Sankaranarayanan;Akira Tanaka;Tetsuo Ozawa;Yasunori Okano;Masahiro Takayanagi;Shinichi Yoda;a
• 通讯作者: a

Investigation of Solute Transport Mechanism in In-Ga-Sb Solution by Insitu X-ray Observation and Numerical Analysis

通过原位X射线观察和数值分析研究In-Ga-Sb溶液中的溶质输运机制

• 发表时间: 2011
• 作者: M. Arivanandhan;G. Rajesh;A. Tanaka;T. Ozawa;Y. Okano;Y. Inatomi;and Y. Hayakawa;M.Arivanandhan;G.Rajesh;M.Arivanandhan;木下恭一;早川泰弘;向井碧;M.Arivanandhan;G.Rajesh
• 通讯作者: G.Rajesh