Crystal orientation dependence of solution growth in InGaSb and InGaAs
Crystal orientation dependence of solution growth in InGaSb and InGaAs
批准号:
22360316
负责人:
INATOMI Yuko
金额:
$11.81万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2012
中文摘要
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英文摘要
InxGa1-xSb and InxGa1-xAs crystals were grown by a temperature gradient method. The morphological change of the growth interfaces, the growth rates, and the compositional distributions were measured by an in-situ observation method and a heat pulse method. Since an applied static magnetic field of 5.5 Tesla suppressed buoyancy convection in InGaSb melt, the indium composition of the grown InxGa1-xSb crystal was almost constant within fluctuation of 0.5 at%. In addition, it was found that growth rate and composition in the grown crystal showed an obvious crystal orientation dependence of InxGa1-xSb bulk crystal growth.
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DOI:
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发表时间:
2013
期刊:
影响因子:
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作者:
[M.Omprakash, M.Arivanandhan, R.A.Kumar, H.Morii, T.AokiI, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa]
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DOI:
--
发表时间:
2011
期刊:
Thin Solid Films
影响因子:
2.1
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微重力下合金半导体晶体生长
DOI:
10.1063/1.3530565
发表时间:
2010
期刊:
AIP conference proceedings
影响因子:
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作者:
[Y. Hayakawa, M. Arivanandhan, G. Rajesh, A. Tanaka, T. Ozawa, Y. Okano, K. Sankaranarayanan and Y. Inatomi]
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发表时间:
2012
期刊:
影响因子:
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DOI:
--
发表时间:
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期刊:
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共 49 条
Growth of high-quality alloy semiconductor bulk crystals based on experimental results in space
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批准号:19H02491
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Magnetic Property of Undercooled Co Alloy Melt
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Precise measurement of diffusion coefficient in semiconductor melt under strong magnetic field
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批准号:13650806
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.09万
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财政年份:2001
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负责人:INATOMI Yuko
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依托单位:
海外基金