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Heat and Mass Transport in Undercooled Melts of Germanium and Silicon

Heat and Mass Transport in Undercooled Melts of Germanium and Silicon
锗和硅过冷熔体中的传热和传质
批准号:
16360320
负责人:
INATOMI Yuko
金额:
$3.26万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2004
资助国家:
日本
项目状态:
已结题
起止时间:
2004 至 2006

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中文摘要
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英文摘要
Containerless processing by a levitation method has been used for materials science and technological applications such as rapid solidification, purification and thermophysical properties measurement of melts. An electromagnetic levitation method (EML) can be used to levitate a relatively large size of a metallic melt in a given atmosphere. However, independent control for the temperature and spatial position of the specimen is difficult and the strong Lorentz force yields electromagnetic stirring in the melt and destabilizes the shape of the melt Recently, a novel method for levitating a metallic melt by EML under a static magnetic field was developed in order to damp the convection and vibration in the melt by the Lorentz force. In the present study, stabilizing of position and shape of a levitated melt for silicon and germanium was succeeded by the new EML method, and convection in each melt was strongly damped by the strong magnetic field.Measurements of the density and thermal conductivity of a pure silicon melt over a wide temperature range were performed by the EML, while those properties for germanium showed large data spreads due to higher evaporation rate of the melt. The emissivity of the melt showed almost constant to temperature. The determined density for silicon melt showed a linear relation with temperature, and no anomalous increase near the melting point was observed In addition the thermal expansion coefficient agreed well with the value calculated based on the metallic liquid model. Since the thermal conductivity of the melt agreed roughly with values estimated by the Wiedemann-Franz law, free electrons in a silicon melt obviously affect the thermal conductivity. In the result it was concluded that silicon melt even in an undercooled state showed metallic characteristic.
期刊论文(21)
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会议论文
シリコン浮遊融液の熱伝導率測定
漂浮硅熔体导热系数的测量
DOI: --
发表时间: 2005
期刊: 日本熱物性シンポジウム講演論文集
影响因子: --
作者: [大西史倫, 長汐晃輔, 稲富裕光, 栗林一彦]
通讯作者: 栗林一彦
DOI: --
发表时间: 2005
期刊: Proceedings of the 26th Japan Symposium on Thermophysical Properties
影响因子: --
作者: [F. Onishi, et. al.]
通讯作者: et. al.
DOI: 10.1007/s10765-007-0160-8
发表时间: 2007-02
期刊: International Journal of Thermophysics
影响因子: 2.2
作者: [Y. Inatomi;F. Onishi;K. Nagashio;K. Kuribayashi]
通讯作者: Y. Inatomi;F. Onishi;K. Nagashio;K. Kuribayashi
DOI: --
发表时间: 2006
期刊: 56th International Astronautical Congress Final Program
影响因子: --
作者: [Fumitomo Onishi, Kosuke Nagashio, Yuko Inatomi, Kazuhiko Kuribayashi]
通讯作者: Kazuhiko Kuribayashi
14
    Growth of high-quality alloy semiconductor bulk crystals based on experimental results in space
    • 批准号:
      19H02491
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $11.07万
    • 财政年份:
      2019
    • 负责人:
      INATOMI Yuko
    • 依托单位:
    Crystal orientation dependence of solution growth in InGaSb and InGaAs
    • 批准号:
      22360316
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $11.81万
    • 财政年份:
      2010
    • 负责人:
      INATOMI Yuko
    • 依托单位:
    Magnetic Property of Undercooled Co Alloy Melt
    • 批准号:
      19360291
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $10.82万
    • 财政年份:
      2007
    • 负责人:
      INATOMI Yuko
    • 依托单位:
    Precise measurement of diffusion coefficient in semiconductor melt under strong magnetic field
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