An Investigation of the Heterogeneous Chemistry Occurring between Atoms and Organometallics during Thin Film Synthesis

薄膜合成过程中原子和有机金属之间发生的非均相化学研究

• 批准号: 0626226
• 负责人: Colin Wolden
• 金额: --
• 依托单位: Colorado School of Mines
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-06-15 至 2009-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0626226&HistoricalAwards=false
• 关键词: Investigation; Heterogeneous; Chemistry; Occurring; between

ABSTRACTPI: Colin A. Wolden Institution: Colorado School of MinesProposal Number: 0626226Title: An Investigation of the Heterogeneous Chemistry Occurring between Atoms and Organometallics during Thin Film SynthesisIntellectual Merit:This project is a novel approach to thin film synthesis that is described as high vacuum plasma-assisted chemical vapor deposition (HVP-CVD). In HVP-CVD organometallic precursors are transported to a substrate under collisionless conditions, where they react under a high flux of reactive atoms. Advantages of HVP-CVD include reduced substrate temperature, significant rates, inherent uniformity, facilitated doping, and the ability to directly study these processes in-situ with high vacuum diagnostics that are not compatible with conventional CVD/ALD technologies. The heterogeneous oxidation and reduction of organometallics to form thin films is accomplished through reactions with atomic oxygen and atomic hydrogen, respectively. One goal of this work is to measure the fundamental reaction kinetics, and understand their dependence on both metal and ligand structure by comparing classes of precursors (i.e. metal alkyls, alkoxides, -diketonates). Thermochemistry calculations, literature review, and experimental screening will be employed to expedite the evaluation of potential precursors. Promising candidates will be subjected to detailed examination using a suite of in situ diagnostics. Specifically, the performance of the high-density plasma source will be quantified and optimized using dynamically gated measurements of atom flux. Emission spectroscopy and detailed modeling will be used to further understand the plasma source. A quartz crystal microbalance will be used to measure the adsorption/desorption behavior of organometallic precursors. Mass spectrometry will be used to measure the products of these surface reactions.The second goal of this work is to apply HVP-CVD to the synthesis of film structures required to meet the imposing challenges posed by Moores law. Materials of interest include high dielectric alternatives to SiO2 as well as metal interconnect structures to replace aluminum. The composition, structure and optoelectronic properties of the deposited films will be characterized. Metal-insulator-semiconductor devices will be fabricated and tested, allowing the full establishment of process-structure-property-performance relationships.Broader ImpactsHVP-CVD may be envisioned for the synthesis of oxide, metals, nitrides, and carbides through appropriate choice of reagents. Its benefits may also be applied compatibly with microelectronic processes such as wafer cleaning and interface engineering. HVP-CVD is a flexible technology that would help enable the implementation of these applications at the nanoscale. In a sense, HVP-CVD is an engineering solution that returns control of CVD to the synthetic chemist. As such, it opens unbounded potential for the molecular design and engineering of thin films and interfaces that are instrumental to nanoscience.The research activities will create novel educational opportunities for students ranging from freshmen to PhD candidates in an integrated fashion. The PI will mentor students from underrepresented groups and pilot a new combined BS/MS degree program. The latter will allow undergraduates to capitalize on their research experience and apply it to a thesis masters degree. Furthermore, the materials produced by this work will be integrated into an existing semiconductor processing course. Interdisciplinary teams will employ high dielectrics to fabricate capacitors and transistors. This grant will also supplement ongoing efforts to integrate computational fluid dynamic across the undergraduate transport curriculum.

摘要：科林·A. Wolden机构：科罗拉多矿业学院提案号：0626226题目：薄膜合成过程中原子和有机金属化合物之间的非均相化学反应的研究智力成果：该项目是一种新颖的薄膜合成方法，被描述为高真空等离子体辅助化学气相沉积（HVP-CVD）。 在HVP-CVD中，有机金属前体在无碰撞条件下被输送到衬底，在那里它们在高通量的反应性原子下反应。 HVP-CVD的优点包括降低的衬底温度、显著的速率、固有的均匀性、促进的掺杂以及利用与常规CVD/ALD技术不兼容的高真空诊断直接原位研究这些工艺的能力。 有机金属化合物形成薄膜的非均相氧化和还原分别通过与原子氧和原子氢的反应来完成。 这项工作的一个目标是测量的基本反应动力学，并通过比较类的前体（即金属烷基，醇盐，-二酮），了解它们对金属和配体结构的依赖。 热化学计算，文献综述和实验筛选将加快潜在的前体的评价。 有希望的候选人将接受一套现场诊断的详细检查。 具体而言，高密度等离子体源的性能将被量化和优化使用动态门控测量原子通量。 发射光谱和详细的建模将用于进一步了解等离子体源。 石英晶体微量天平将用于测量有机金属前体的吸附/脱附行为。 质谱法将被用来测量这些表面反应的产物。这项工作的第二个目标是应用HVP-CVD的薄膜结构的合成所需的，以满足摩尔斯定律所提出的严峻挑战。 感兴趣的材料包括SiO2的高介电替代品以及替代铝的金属互连结构。 沉积薄膜的组成，结构和光电性能的特点。 金属-绝缘体-半导体器件将被制造和测试，允许完全建立工艺-结构-性能-性能的关系。更广泛的影响HVP-CVD可以预见的氧化物，金属，氮化物和碳化物的合成通过适当的选择试剂。 其优点也可以与微电子工艺兼容地应用，例如晶片清洁和接口工程。 HVP-CVD是一种灵活的技术，有助于在纳米级实现这些应用。 从某种意义上说，HVP-CVD是一种将CVD控制权交还给合成化学家的工程解决方案。 因此，它为有助于纳米科学的薄膜和界面的分子设计和工程开辟了无限的潜力。研究活动将以综合的方式为从新生到博士生的学生创造新的教育机会。 PI将指导来自代表性不足群体的学生，并试点一个新的BS/MS学位课程。后者将允许本科生利用他们的研究经验，并将其应用于论文硕士学位。 此外，这项工作所产生的材料将被整合到现有的半导体加工过程中。 跨学科的团队将使用高功率来制造电容器和晶体管。 这笔赠款还将补充正在进行的努力，以整合整个本科交通课程的计算流体动力学。