InP-based room-temperature semiconductor spintronic materials and devices

InP基室温半导体自旋电子材料与器件

• 批准号: 22560005
• 负责人: UCHITOMI Naotaka
• 金额: $ 3.16万
• 依托单位: Nagaoka University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2010
• 资助国家: 日本
• 起止时间: 2010 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22560005/
• 关键词: スピントロ二クス; 半導体スピントロニクス; 結晶工学; 結晶成長; 界面・界面物性; 半導体

Ferromagnetic semiconductors have been recently attracted world wide scientific and technological interest because of possible application in spintronic devices. Two-major criteria such as room-temperature ferromagnetism and process compatibility for semiconductor spintronic materials are required from a practical point of view. Mn-doped ZnSnAs2 thin films were grown on InP substrates by molecular beam epitaxy (MBE). Heteroepitaxial growth of InGaAs and InAlAs layers on ZnSnAs2 / InP using low-temperature MBE is investigated in order to produce InP-based spintronic devices. We have successfully grown MnAs/ZnSnAs2/ZnSnAs2:Mn trilayer heterostructures on InP(001) substrates. The current-in-plane giant magnetoresistance (CIP-GMR) was clearly observed in magnetoresistance measurements in current-in-plane geometry.

铁磁半导体由于其在自旋电子器件中的应用前景，近年来引起了世界科学界的广泛关注。从实际的角度来看，半导体自旋电子材料需要两个主要的标准，如室温铁磁性和工艺兼容性。采用分子束外延（MBE）技术在InP衬底上生长mn掺杂ZnSnAs2薄膜。研究了低温MBE在ZnSnAs2 / InP上异质外延生长InGaAs和InAlAs层，以制备基于InP的自旋电子器件。我们成功地在InP（001）衬底上生长出了MnAs/ZnSnAs2/ZnSnAs2:Mn三层异质结构。在平面电流几何测量中，可以清楚地观察到面内电流巨磁阻（CIP-GMR）。

项目成果

Photoluminescence of MBEgrown ZnSnAs2:Mn / InP nanolayers

MBE 生长的 ZnSnAs2:Mn / InP 纳米层的光致发光

• 发表时间: 2011
• 作者: E. Mammadov;M.Haneta;H.Toyota;N.Uchitomi
• 通讯作者: N.Uchitomi

3D Local Structure Analysis of ZnSnAs2 : Mn by X-Ray Fluorescence Holography

通过 X 射线荧光全息术分析 ZnSnAs2 : Mn 的 3D 局部结构

• 发表时间: 2010
• 作者: 三浦康弘;杉本直樹;秋山弘成;長谷川裕之;山田和広;K.Hayashi
• 通讯作者: K.Hayashi

Studies of zinc-blende type MnAs thin films grown on InP(001) substrates by XRD

• DOI: 10.1016/j.jcrysgro.2012.12.095
• 发表时间: 2013-09
• 期刊: Journal of Crystal Growth
• 影响因子: 1.8
• 作者: H. Oomae;S. Irizawa;Y. Jinbo;H. Toyota;T. Kambayashi;N. Uchitomi

Middle rangelocal structure analysis of dilutedmagnetic semiconductor ZnSnAs2:Mn thin films by X-ray fluorescenceholography

X射线荧光全息法分析稀磁半导体ZnSnAs2:Mn薄膜的中程局域结构

• 发表时间: 2012
• 作者: A.Suzuki;K.Hayashi;N.Happou;S.Hosokawa;K.Yamagami;W.Hu,M.Suzuki;N.Uchitomi
• 通讯作者: N.Uchitomi

Growth and properties of zinc-blende MnAs thin films on InP(001) substrates

InP(001)衬底上闪锌矿MnAs薄膜的生长及性能

• 发表时间: 2010
• 作者: F.Bussolotti;Y.Yamada-Takamura;R.Friedlein;H.Oomae
• 通讯作者: H.Oomae