Fabrication of InSb-based high-speed and low power devices on Si by using surface reconstruction controlled epitaxy

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InSb has attracted much interest for application of ultra-fast and low power devices. To realize the InSb-based FET, we prepared the quasi-pseudomorphic quantum well MOSFETs, in which the thin InSb layer was grown on Si（111) substrate by using surface reconstruction controlled epitaxy,, and 10- 30nm-thick Al2O3 layer was deposited on the InSb layer. As the results, our quasi-pseudomorphic QW-MOFET device with 15nm-thick InSb layer, gate length of 5μm and gate width of 40μm showed high transconductance of 63mS/mm.