Fabrication of InSb quantum well on Si using surface reconstruction Assisted growth method and its application for ultra-fast FET
Fabrication of InSb quantum well on Si using surface reconstruction Assisted growth method and its application for ultra-fast FET
批准号:
19760233
负责人:
MORI Masayuki
金额:
$2.45万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Young Scientists (B)
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2009
中文摘要
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英文摘要
InSb has attracted much interest for application of ultra-fast and low power devices. To realize the InSb-based FET, we grew the InSb and AlInSb films using new growth method called "Surface Reconstruction assisted growth", and evaluated them. The fully rotated InSb and AlInSb films were successfully grown using Si(111)-√<7>×√<3>-In surface reconstruction. However, due to its high hall concentration and low resistivity, trial FET didn't work as a transistor.
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InSb films grown on the V-grooved Si(001) substrate with InSb bi-layer
在具有 InSb 双层的 V 形槽 Si(001) 衬底上生长的 InSb 薄膜
DOI:
--
发表时间:
2010
期刊:
Physics Procedia 3
影响因子:
--
作者:
[M.Mori, S.Khamseh, T.Iwasugi, K.Nakatani, K.Murata, M.Saito, K.Maezawa]
通讯作者:
K.Maezawa
Heteroepitaxial growth of InSb films on the patterned Si(001) substrate
在图案化的 Si(001) 衬底上异质外延生长 InSb 薄膜
DOI:
--
发表时间:
2010
期刊:
Physics Procedia 3
影响因子:
--
作者:
[T.Iwasugi, M.Mori, H.Igarashi, K.Murata, M.Saito, K.Maezawa]
通讯作者:
K.Maezawa
Heteroepitaxial growth of InSb films on a Si (111) substrate by inserting AISb buffer layer
通过插入AISb缓冲层在Si(111)衬底上异质外延生长InSb薄膜
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[K. Murata, N.B. Ahmad, M. Mori, T. Tambo, K. Maezawa]
通讯作者:
K. Maezawa
Heteroepitaxial growth of rotate AlInSb layer mediated by InSb bi-layer on Si(111) substrate
Si(111) 衬底上 InSb 双层介导的旋转 AlInSb 层异质外延生长
DOI:
--
发表时间:
2009
期刊:
Physica Status Solidi (c) 6
影响因子:
--
作者:
[M.Saito, M.Mori, K.Ueda, K.Maezawa]
通讯作者:
K.Maezawa
InSb単分子層を介したSi(111)基板上めAIInSb薄膜のヘテロエピタキシャル成長
单层 InSb 在 Si(111) 衬底上异质外延生长 AlInSb 薄膜
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[中谷公彦, 斉藤光史, 上田広司, 森雅之, 前澤宏一]
通讯作者:
前澤宏一
共 34 条
Identification of genes for ulcerative colitis utilizing SAM mice
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批准号:24500487
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.33万
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财政年份:2012
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负责人:MORI Masayuki
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依托单位:
Fabrication of InSb-based high-speed and low power devices on Si by using surface reconstruction controlled epitaxy
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批准号:22560323
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.83万
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财政年份:2010
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负责人:MORI Masayuki
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依托单位:
Molecular genetic analysis of hybrid vigor and inbreeding depression utilizing recombinant inbred mouse strains
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批准号:21650097
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.13万
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财政年份:2009
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负责人:MORI Masayuki
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依托单位:
Structural Insight for Ca channel Regulation by Calmodulin
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批准号:20770110
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项目类别:Grant-in-Aid for Young Scientists (B)
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资助金额:$2.83万
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财政年份:2008
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负责人:MORI Masayuki
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依托单位:
Characterization of SAM mice as an ulcerative colitis model
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批准号:19300145
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.07万
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财政年份:2007
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负责人:MORI Masayuki
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依托单位:
Generation of hypomorphic model mice utilizing an mRNA instability element
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批准号:17500286
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.24万
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财政年份:2005
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负责人:MORI Masayuki
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Analysis and application of newly discovered rat L1 retotransposon
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批准号:14580796
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.37万
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财政年份:2002
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负责人:MORI Masayuki
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Analysis of repair systems for oxidative DNA damage in Senescence-Accelerated Mouso
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批准号:11680819
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.37万
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财政年份:1999
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负责人:MORI Masayuki
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依托单位:
海外基金