Optical response using spin dynamics of InAs quantum dot cavity

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We fabricated the GaAs/ AlAs multilayer cavity with Er-doped InAs quantum dots(QDs) for the ultrafast all optical switching due to the electron spin polarization rotation. The structure and its carrier decay time were characterized by the optical reflection and time-resolved optical measurements, respectively. In the optical communication waveband(~ 1. 5μm), we showed the fast decaying(<10 ps) electron spins are strongly polarized in the Er-doped InAs QDs in the cavity by the circular polarization time-resolved pump and probe methods. This indicates that the ultrafast all optical switching due to the electron spin polarization rotation is expected using the Er-doped InAs QD cavity.