Study on spin arrangement in two dimensional ferromagnetic-antiferromagnetic nanostructure

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Magnetic nano-patterned films which have L10 ordered structure in whole patterned area were fabricated for investigating bit patterned media. On the ferromagnetic (FM)-weak FM pattern with the dot size of 50nm, the switching field distribution of FM dots were decreased to 2/5 due to its exchange coupling between dots and spacing. On the FM-antiferromagnetic (AF) pattern, no exchange bias occurred because of its canceled spin arrangement (AF1 or AF3 type) or insufficient thickness of AF phase for existence of spin-frustrations. These results should be advantageous for decreasing the switching field distribution on HDD.