Study on bound exciton states of isoelectronic centers

半导体中的杂质中心已经引起了人们对实现具有特定发射波长的固态光子源的强烈兴趣。在这项工作中，我们实现了与氮(N)对结合的激子发射波长的极高均匀性。我们研究了氮掺杂砷化镓中N对激子的空间定位。此外，我们还研究了n δ掺杂砷化镓中的束缚激子-声子耦合。

Impurity centers in a semiconductor have been attracting a strong interest for the realization of the solid-state photon sources with the specific emission wavelength. In this work, we achieved an extremely high uniformity of the emission wavelength for the exciton bound to the nitrogen(N) pairs. We studied the spatial localization of excitons bound to N pairs in Nδ-doped GaAs. Furthermore, we studied the bound exciton-acoustic phonon coupling in Nδ-doped GaAs.