Study on bound exciton states of isoelectronic centers

半导体中的杂质中心在实现具有特定发射波长的固态光子源方面引起了人们的浓厚兴趣。在这项工作中，我们实现了束缚在氮(N)对上的激子发射波长的极高的一致性。我们研究了N-δ掺杂的GaAsN对激子的空间局域化。此外，我们还研究了N-δ掺杂GaAs中的束缚激子-声学声子耦合。

Impurity centers in a semiconductor have been attracting a strong interest for the realization of the solid-state photon sources with the specific emission wavelength. In this work, we achieved an extremely high uniformity of the emission wavelength for the exciton bound to the nitrogen(N) pairs. We studied the spatial localization of excitons bound to N pairs in Nδ-doped GaAs. Furthermore, we studied the bound exciton-acoustic phonon coupling in Nδ-doped GaAs.