Epitaxial growth of SiGe films on ferromagnetic alloys and its application to vertical spin devices

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For vertical-metallic source/drain spin transistors, we focused on the high-quality fabrication of semiconductor channels on a ferromagnetic metal. Using molecular beam epitaxy and atomic arrangements between Fe_3Si and Ge at the (111) plane, we have developed Si atomic termination method for the Fe_3Si surface. As a result, we demonstrated epitaxial growth of high-quality Ge films on Fe_3Si. This study will open a new way for vertical-type Ge-channel transistors with metallic source/drain contacts.